Applications of Atomic Layer Deposition in Design of Systems for Energy Conversion

Abstract

There is a huge demand for clean energy conversion in all industries. The clean energy production processes include electrocatalytic and photocatalytic conversion of water to hydrogen, carbon dioxide reduction, nitrogen conversion to ammonia, and oxygen reduction reaction and require novel cheap and efficient photo‐ and electrocatalysts and their scalable methods of fabrication. Atomic layer deposition is a thin film deposition method that allows to deposit thin layers of catalysts on virtually any surface of any shape, size, and porosity in an even and easy to control manner. Here the state of the art in applications of atomic layer deposition in the clean energy production and the opportunities it represents for the whole field of the photo‐ and electrocatalysis for a sustainable future are reviewed.

Isolating Single and Few Atoms for Enhanced Catalysis

“…The atomic layer deposition (ALD) technique is a promising approach to design and synthesize advanced catalysts through uniformly depositing of metal precursors on the substrate in a self-limiting and layer-by-layer manner. [59,60] In 2013, Sun and co-workers first reported the synthesis of Pt single atoms on graphene by the ALD technique. [61] The as-prepared SAC showed significantly enhanced electrochemical performance compared with commercial Pt/C.…”

Large‐Scale Integration of a Zinc Metasilicate Interface Layer Guiding Well‐Regulated Zn Deposition

“…ALD method can be used to prepare ultrathin coatings with controllable thickness at nanometer level, [24] but the types of coatings are limited and so far it is still difficult to achieve low-cost and large-scale production. [28] In principle, Zn-based compounds can form in situ on the Zn surface through the reaction between raw materials and Zn foil, and build tight connections with Zn surface. Recently, ZnF 2 , [29,30] ZnO, [31] ZnS, [32] and Zn 3 (PO 4 ) 2 •4H 2 O [33] have been studied as interface layers, showing the potential of Zn-based compounds on Zn anode protection.…”

Oxygen relocation during HfO2 ALD on InAs

“…ALD, with enormous potential in a large variety of material-dependent technologies, [14][15][16][17] is based on the self-limiting reaction of gaseous precursors with the surface of a substrate. The ALD of transition metal oxides, such as HfO 2 , uses two precursors, a metal and an oxygen one.…”