Applications of amorphous semiconductors

Bosnell, J.R.

doi:10.1088/0305-4624/4/2/i01

Cited by 10 publications

(1 citation statement)

References 121 publications

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“…This DC current could flow for an indefinite period of time; however DC operation must not degrade the characteristics of the latching device. The technological problems associated with the preparation and incorporation of latching elements into displays favour the choice of monostable devices in preference to either thin-film transistors or bistable devices (Bosnell 1973). This is true especially for opto-electronic displays employing DC electroluminescent, electrochromic or liquid-crystal elements.…”

Section: Experimental Characteristics Of Monostable Devicesmentioning

confidence: 99%

The characteristics of monostable switching in amorphous niobate films

Thomas¹,

Lettington²

1977

J. Phys. D: Appl. Phys.

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Describes the preparation of monostable devices using amorphous films of 19 at.% Nb, 13 at.% Na, 2 at.% Si, 66 at.% O. Forming occurs in these devices, similar to the behaviour observed in chalcogenide films. The threshold voltages of both virgin and formed devices are proportional to the square of the electrode separation. This observation has been interpreted as suggesting that excess charge is injected into the device prior to switching. It was found that small DC currents flowing during the on-state do not degrade the characteristics of a monostable device; hence potential applications include use as latching devices in matrix-addressed multi-element displays and other volatile memories.

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Section: Experimental Characteristics Of Monostable Devicesmentioning

confidence: 99%

The characteristics of monostable switching in amorphous niobate films

Thomas¹,

Lettington²

1977

J. Phys. D: Appl. Phys.

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Effect of heat treatment on the conduction and structure of GeSeTe amorphous alloys

Hafiz

Ammar

Al-Adl

et al. 1983

Phys. Stat. Sol. (a)

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The effect of heat treatment on the structure and electrical resistivity of the amorphous alloys of the system Geg0SezTe8o--., where z = 15,30, and 60 is studied. Irreversible resistivity changes are observed after heating above the glass transition temperature, accompained by the appearance of the dendritic Te crystalline phase. The amount of the crystalline phase increases with increasing the annealing temperature. The effect of heat treatment on the structure transformation is investigated using DTA, X-ray, and scanning microscopy. The amorphous to crystalline transformation and its effect on the resistivity is discussed. Der EinfluB thermischer Behandlung auf die Struktur und den spezifischen Widerstand der amorphen Legierung Ge20Se,Te80-~ (mit z = 15, 30 und 50) wird untersucht. Eine nichtumkehrbare elektrische Widerstandsiinderung wird nach Erwiirmung iiber die Glastemperatur beobachtet, die von einer dendritischen Kristallphase von Te begleitet ist. Die Menge der Kristallphase nimmt mit der Erholungstemperatur zu. Der EinfluB der thermischen Behandlung auf die Strukturtransformation wird mit Hilfe der DTA, Rontgenstrahlung und Rastermikroskopie untersucht. Der Ubergang von der amorphen in die Kristallstruktur und sein EinfluB auf den spezifischen elektrischen Widerstand wird diskutiert.

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Literatur

Köster¹

1976

Kristallisation Und Entmischung Amorpher Germanium-Legierungen

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Applications of amorphous semiconductors

Cited by 10 publications

References 121 publications

The characteristics of monostable switching in amorphous niobate films

The characteristics of monostable switching in amorphous niobate films

Effect of heat treatment on the conduction and structure of GeSeTe amorphous alloys

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