Applications and simulation of unconventional bulk-micromachining using underetching of {100} silicon planes

Abstract

In this paper we present the principle and feasibility of bulk-micromachining using underetching of vertical +1 0 0, Silicon planes. Beside the demonstration of realized devices we investigate the fabrication reproducibility of these devices by simulating the anisotropic etching process for different cases of mask misalignment and crystal misorientation of the silicon wafer. Devices fabricated by the proposed etching technique can be reproduced within variations in mechanical performance lower than 3% if precautions such as an adapted design or pre-etching are considered.

A simple approach to convex corner compensation in anisotropic KOH etching on a (1 0 0) silicon wafer

“…If ( 9) is fulfilled, considering that the {1 0 0} sidewalls are etched with the same rate as the etching in the direction perpendicular to the wafer top face [18], the etch depth of step 2 can be solved as…”

Basic Technologies for Microsystems

“…Simple shapes like V-grooves and cavities may be produced in silicon by selectively removing material from the substrate [1,26,[39][40][41][42]. Simple shapes like V-grooves and cavities may be produced in silicon by selectively removing material from the substrate [1,26,[39][40][41][42].…”

A novel process for perfect convex corner realization in bulk micromachining

“…Considerable undercutting occurs at convex corners resulting in poor control of the shape and size of the microstructure. The mechanism of undercutting of convex corners and control of etched shapes have been the subject of extensive research but complete understanding and techniques for overcoming these have still not been achieved [3][4][5][6][7][8][15][16][17][18].…”