Application of VEMA type ArF Resist to Sub-100nm Lithography.

Abstract

It is expected that ArF lithography will be introduced for device manufacturing for sub-100 nm nodes, as high NA ArF step and scan systems (NA=O.75) become available. We previously reported on a platform, based on a vinyl ether-maleic anhydride (VEMA) alternating polymer system. This platform demonstrated both good resolution and high dry etch resistance in comparison to other platforms based on acrylate and cyclic-olefin-maleic anhydride (COMA) polymer systems. The VEMA platform has been continuously improved to meet the increasing requirements, such as resolution, depth of focus (DOF), iso-dense bias, and post-etch roughness for real device manufacturing. This VEMA system is being implemented for sub-100 nm device with high NA (NAO.75) =ArF exposure systems. In this paper, recent experimental results are reviewed. Photoresist, chemically amplified resist, ArF, lithography, VEMA.

Design, synthesis, and photosensitive performance of polymethacrylate‐positive photoresist‐bearing o‐nitrobenzyl group

“…It also has a decisive impact on photoresist performances . The regular photoresist resin systems include acrylic acid and acrylic esters, polycyclic olefin polymer, cyclic olefin, and maleic anhydride copolymer, vinyl ether, and maleic anhydride copolymer, polycyclic olefin ring–opening polymer, multicopolymer. Among them, acrylic esters system was widely used as it has a better resolution, sensitivity, and adsorptive property.…”