Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS Structures

Abstract

The present paper examines the theoretical aspects of the triangular voltage sweep (TVS) technique and describes the development of a unified quasiequilibrium approach wherein various polarization processes in an MOS capacitor structure subjected to the changing applied field are evaluated in terms of their contributions to the externally observed current. It is shown that a self-consistent experimental and analytical approach must be used when the TVS technique is applied to mobile charge studies in MOS structures.

Dynamic electrophysical characterization of rubidium polytungstate, Rb4W11O35, under fast humidity impact

“…3 and 5) are characteristic for MISstructures in the presence of the mobile ionic charge [21,22]. A general view of the unipolar IeV-curves (Fig.…”

“…The IeV-and QeV-loops were registered under triangular voltage and Iet-curves were registered under rectangular meander voltage as it was done for ferroelectric [7,19,20] and metal e silicon oxide e metal [21,22] structures. The IeV-, QeV-and Iet-measurements were performed in the multi-cycle mode under applied drive voltage in the amplitude range 0.1 V d 10 V and frequency range 1 Hz f d 1 kHz.…”

Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics

“…Energy distributions of surface state densities Nss were calculated by the conventional quasi-static technique. Mobile ion densities were measured by the triangular-voltage-sweep (TVS) technique (18). Mobile ions were accumulated close to the silicon substrate by applying an electric field of 1 mV/cm to the gate insulator at 230~ and were moved toward the gate electrodes by reducing the applied field.…”

Evidence for metastable defects in airgap interconnects

“…11 and 12) which shows that it is possible to reduce the defectivity with proper curing steps. To get more insight into this metastable behavior, we performed measurements similar to TVS, classically used to study mobile charges in MOS devices [10]. The simultaneous measurement of leakage and capacitance after stressing the device 600 s at À1.85 MV/cm clearly depicts two capacitance peaks (Fig.…”