Application of thin nanocrystalline VN film as a high-performance diffusion barrier between Cu and SiO2

Takeyama, Mayumi B.; Itoi, Takaomi; Satoh, Kazumi; Sakagami, Masakazu; Noya, Atsushi

doi:10.1116/1.1800471

Cited by 22 publications

(22 citation statements)

References 16 publications

(14 reference statements)

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“…The VN/MgO(011) room-temperature resistivity, ρ 300 K = 33.0 μ cm, is lower than reported results for polycrystalline bulk VN, 85 μ cm [40], and VN thin films, 34−57 μ cm [64][65][66][67]. Measured temperature-dependent VN/MgO(011) resistivities ρ(T ) between 300 and 4 K are presented in Fig.…”

Section: Vn Temperature-dependent Resistivitymentioning

confidence: 70%

Dynamic and structural stability of cubic vanadium nitride

et al. 2015

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Structural phase transitions in epitaxial stoichiometric VN/MgO(011) thin films are investigated using temperature-dependent synchrotron x-ray diffraction (XRD), selected-area electron diffraction (SAED), resistivity measurements, high-resolution cross-sectional transmission electron microscopy, and ab initio molecular dynamics (AIMD). At room temperature, VN has the B1 NaCl structure. However, below T c = 250 K, XRD and SAED results reveal forbidden (00l) reflections of mixed parity associated with a noncentrosymmetric tetragonal structure. The intensities of the forbidden reflections increase with decreasing temperature following the scaling behavior I ∝ (T c − T ) 1/2 . Resistivity measurements between 300 and 4 K consist of two linear regimes resulting from different electron/phonon coupling strengths in the cubic and tetragonal-VN phases. The VN transport Eliashberg spectral function α 2 tr F ( ω), the product of the phonon density of states F ( ω) and the transport electron/phonon coupling strength α 2 tr ( ω), is determined and used in combination with AIMD renormalized phonon dispersion relations to show that anharmonic vibrations stabilize the NaCl structure at T > T c . Free-energy contributions due to vibrational entropy, often neglected in theoretical modeling, are essential for understanding the room-temperature stability of NaCl-structure VN, and of strongly anharmonic systems in general.

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Section: Vn Temperature-dependent Resistivitymentioning

confidence: 70%

Dynamic and structural stability of cubic vanadium nitride

et al. 2015

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“…Due primarily to strong covalent bonds [28], VN exhibits high melting temperature (2050 °C), hardness (15.9 GPa), electrical conductivity (33 μΩ-cm), and chemical stability [28][29][30]. As a consequence, VN films have been employed to enhance the properties of cutting and grinding tools, hard electrical contacts, cylinder linings, diffusion barriers, and rechargeable microbatteries and supercapacitors [25,[31][32][33][34][35]. A better knowledge of VN thermal and electrical transport properties could improve materials design for new applications.…”

Section: Introductionmentioning

confidence: 99%

Phonon and electron contributions to the thermal conductivity of VNx epitaxial layers

Zheng

Mei

Tuteja

et al. 2017

Phys. Rev. Materials

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Thermal conductivities of VNx/MgO(001) (0.76 ≤ x ≤ 1.00) epitaxial layers, grown by reactive magnetron sputter deposition, are measured in the temperature range 300 < T < 1000 K using timedomain thermoreflectance (TDTR). Data for the total thermal conductivity are compared to the electronic contribution to the thermal conductivity calculated from the measured electrical conductivity, the Wiedemann-Franz law, and an estimate of the temperature dependence of the Lorenz number L(T). The total thermal conductivity is dominated by electron contribution and varies between 13 W m -1 K -1 at x = 0.76 and 20 W m -1 K -1 at x = 1.00 for T = 300 K and between 25 and 35 W m -1 K -1 for T = 1000 K. The lattice thermal conductivity vs. x ranges from 5 to 7 W m -1 K -1 at 300 K and decreases by 20% at 500 K. The low magnitude and weak temperature dependence of the lattice thermal conductivity are attributed to strong electron-phonon coupling in VN.

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“…NaCl-structure d-VN x has an extended single-phase field with x ranging from 0.8 to 1.0 at T s ¼ 500 C. 1 Polycrystalline VN x thin films are employed in a variety of applications, including diffusion barriers in microelectronic devices, 2,3 anodes in rechargeable lithium ion batteries, 4 and hard wear-, abrasion-, and scratch-resistant coatings. 5 The wide range of VN x applications stems not only from high hardness [6][7][8] and mechanical strength 6 but also from the enhanced physical properties achieved with VN-based nanostructures and alloys.…”

Section: Introductionmentioning

confidence: 99%