Application of the Tight Binding Method onto the von-Neumann Equation

Abstract

This paper presents a numerical framework for the analysis of quantum devices based on the von-Neumann (VN) equation, which involves the concept of theTight Binding Method (TBM). The model is based on the application of the Tight Binding Hamiltonian within Quantum Liouville Type Equations and has the advantage that the atomic structure of the materials used is taken into account. Furthermore, the influence of a Complex Absorbing Potential and its essential contribution to the system stability with respect to the eigenvalue spectrum is discussed.