Application of the Selective Silicon Etching Methods for Estimation of the Wafers Quality in the Micromechanical Sensors

Abdullin, F.A.; Pautkin, V.E.; Pecherskaya, E. A.; Pecherskiy, Anatoliy V.; Артамонов, Д. В.; Nikolaev, K. O.

doi:10.1109/sed.2019.8798467

Cited by 7 publications

(4 citation statements)

References 8 publications

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“…where λ is the working wavelength; n the refractive index of SiO 2 ; 𝑑 is the thickness of the anti-reflective film. To study the structural perfection of the surface of the substrates after thermal operations, selective etching was carried out in Sirtle's etchant [13].…”

Section: Methodsmentioning

confidence: 99%

Problems of Masking and Anti-Reflective SiO2 in Silicon Technology

Kukurudziak

2023

East Eur. J. Phys.

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The article examines the problems of thermal oxidation of silicon. Oxidation plays an important role in planar technology, which in turn is the basis of the technology of silicon integrated circuits, photodetectors and other solid-state electronics. During our production of silicon p-i-n photodiodes, a number of systematic types of defects and deterioration of product parameters caused by the degradation of masking or anti-reflective coatings during the manufacturing process were observed. A decrease in the insulation resistance of responsive elements in multi-element photodiodes was observed, which contributed to the increase of dark currents. A decrease in the responsivity of the products due to the degradation of the thickness or structure of the anti-reflective coating during technological operations, etc., was also revealed. It was established that the reason for the decrease in insulation resistance is the formation of inversion layers at the Si-SiO2 interface, the presence of which can be detected when measuring CV-characteristics. It was also established that chemical treatment of substrates with SiO2 in boiling acid solutions helps to reduce the thickness of the oxide. To avoid deviation of the thickness of the film from the condition of minimum reflection, it is necessary to grow a thicker layer of anti-reflective coating. It is noted that when etching the oxide during photolithography or when removing the PSG/BSG in hydrofluoric acid, it is not permissible to remove the cassette with plates from the solution for a long time, as this leads to uneven etching of the film due to the flow of the herb on the surface of the substrate. The causes of defect formation in Si and SiO2 during oxidation are given. Thus, with improper mechanical and chemical processing of the plates, cristobalite inclusions may form in the film during oxidation. Cristobalite has a higher density than quartz glass, and the boundaries between amorphous regions and denser crystalline regions represent voids, which can be filled both by impurities from the surface and by the diffusant in the diffusion process. Also, during oxidation in silicon, packing defects are often formed. Centers of defect genesis can be mechanical damage to the plate surface or growth defects.

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Section: Methodsmentioning

confidence: 99%

Problems of Masking and Anti-Reflective SiO2 in Silicon Technology

Kukurudziak

2023

East Eur. J. Phys.

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“…The capacitance of REs (C RE ) was determined at a U bias =2-120 V To investigate the defective structure of the substrates with [111] orientation, chemical treatment was performed in selective Sirtle`s etchant [12] with the following composition: HF -100 cm 3 , CrO 3 -50 g, H 2 O -120 cm 3 To investigate the defective structure of the substrates with [100] orientation, chemical treatment was performed in selective Secko's etchant [13] with the following composition: 4.4% K 2 Cr 2 O 7 : HF = 1 : 2 Then the surface was examined in microscopes of different magnifications. The number of dislocations was calculated by the metallographic method [14].…”

Section: Methodsmentioning

confidence: 99%

Influence of silicon characteristics on the parameters of manufactured photonics cells

Kukurudziak,

Lipka

2023

East Eur. J. Phys.

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The paper investigates the influence of the electrophysical characteristics of silicon on the final parameters of photoelectronic elements using p-i-n photodiodes as an example. It has been found that photodiode samples made on the basis of silicon with a higher resistivity are more prone to the formation of inversion channels at the oxide-semiconductor interface. Also, the dark current and responsivity of such photodiodes reach saturation at a lower voltage. It has also been shown that silicon-based photodiodes with a longer lifetime of non-basic charge carriers have lower dark current values. It has been shown that products with crystallographic orientation [111] have a much lower density of surface dislocations after technological operations than in the case of silicon with orientation [100]. It was also found that materials with different crystallographic orientations have different phosphorus diffusion coefficients. It has been experimentally established that a silicon oxide film grows faster on the surface of crystallographic orientation silicon [111] than on the surface of crystallographic orientation silicon [100]. This is due to the difference in the surface density of silicon atoms inherent in different crystallographic planes.

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“…To regulate the functional-chemical composition of the surface, various methods of chemical (alkaline and alkaline-acid) etching [5][6][7][8][9], as well as physical methods (in particular, electron beam processing [10], etc.) are used.…”

Section: Introductionmentioning

confidence: 99%

“…Для регулирования функционально-химического состава поверхности применяют разнооб-разные методы химического (щелочного и щелочно-кислотного) травления [5][6][7][8][9], а также физические методы (в частности, электронно-лучевую обработку [10] и т.д. ), однако такие материалы, как кремний, являются устойчивыми к воздействию большинства кислот и щелочей, что часто не позволяет добиться стабильного и воспроизводимого модифицирования поверхности и приводит лишь к неравномерному травлению и нестабильному изменению состава поверхностных функциональных групп.…”

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Parametric Identification of the Thermal Conductivity Coefficient of Mirror Materials Operating in the Orbital Flight Section

Borshchev¹

2022

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This paper presents a method for determining the thermal conductivity coefficient on mirror materials of spacecraft operating in the orbital flight section. This problem is solved as a problem of searching for the global extremum of the parametrized coefficient of thermal conductivity in the course of minimizing the root-mean-square functional of the discrepancy between the theoretical and experimental temperature fields in the places where temperature sensors are installed. Inverse problems are considered incorrect due to "noisy" input data. To overcome this, it is necessary to apply regularization. This study employs the iterative regularization method, with the iteration number serving as the regularized parameter. The method of conjugate gradients is chosen as the optimization algorithm, because it is the most accurate method of the first order of convergence.

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Application of the Selective Silicon Etching Methods for Estimation of the Wafers Quality in the Micromechanical Sensors

Cited by 7 publications

References 8 publications

Problems of Masking and Anti-Reflective SiO2 in Silicon Technology

Problems of Masking and Anti-Reflective SiO2 in Silicon Technology

Influence of silicon characteristics on the parameters of manufactured photonics cells

Parametric Identification of the Thermal Conductivity Coefficient of Mirror Materials Operating in the Orbital Flight Section

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