Application of the finite element method to mass transport limited epitaxial growth process

Selective Area Masked Growth (Nano to Micro)

“…Ideally, epitaxial single crystal will grow uniformly only in the windows opened in the mask. To predict the growth enhancement effect and to control the thickness and composition of the deposited layers, much effort has been devoted to develop models accurately that describe the growth kinetics [7][8][9][10][11][12][13][14][15][16][17][18][19]. Polycrystalline growth on the mask can be avoided by choosing a halogen-based precursor and suitable growth conditions [2,[4][5][6].…”

“…During the late 1960s, MOCVD emerged as a promising technique in the production of a wide range of single crystal layers of compound semiconductor materials [26][27][28][29]. Two growth mechanisms were proposed to explain the kinetics of the local growth enhancement: surface diffusion [42] and vapor-phase diffusion [7,13,16]. It was found experimentally that the selectivity is highly depending on the substrate temperature, the chamber pressure, and the local geometry of the mask windows.…”