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Application of SiO2 Films deposited by TICS/O2 PECVD to InSb MISFET
Abstract: We have fabricated n-channel InSb MISFETs using SiO 2 films as gate insulators. The insulator was deposited by PECVD using tetra-isocyanate-silane (TICS) and oxygen (02) as source gases. Threshold voltage and carrier mobility at 77K were 0.5V and 4200cm2/Vs, respectively.
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2003
2003
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