Application of Silicon Damage to Neutron Exposure Measurement

Poblenz, F. W.; Taulbee, C. D.; Walker, R.L.

doi:10.1109/tns.1967.4324786

Cited by 4 publications

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“…Since the threshold activation detector can determine the neutron fluence only after the end of the exposure, now and again attempts of employing simple low-cost and prompt monitoring methods are made, in particular, using silicon resistors, diodes, and transistors [1][2][3][4][5]. Since the threshold activation detector can determine the neutron fluence only after the end of the exposure, now and again attempts of employing simple low-cost and prompt monitoring methods are made, in particular, using silicon resistors, diodes, and transistors [1][2][3][4][5].…”

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confidence: 99%

10.1007/s10786-008-2003-7

2000

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It is shown that the change of the specific electrical conductivity (SEC) of silicon single crystals in the process of their irradiation is directly proportional to the fast-neutron fluence. This is used as the basis of the principle of the neutron-flux detection. The coefficient of proportionality depends on the neutron spectrum, but does not depend on the initial SEC, which significantly simplifies detector calibration. A set of wafers with different SEC values has been manufactured using the technology silicon neutron-transmutation doping. The SEC has been measured by the four-probe method. A simple method for measuring the SEC without recourse to any special setup is proposed. The random measurement error of the fast-neutron fluence was ~10% , and the absolute one was ~37% . PACS numbers: 29.40.Wk

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confidence: 99%