Application of Power Step Stress Techniques to Transistor Life Predictions

Sikora, G. C.; Miller, L. E.

doi:10.1109/irps.1964.362277

Cited by 2 publications

(2 citation statements)

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“…10, showing the effect of reverse-bias voltage stress on the temperaturelife regression line, on a particular diode type subject to a charge-movement type of failure mechanism. The activation energy shown is 1.14 eV, close to the 1.02 eV of charge motion on transistor surfaces; for transistors, however, there is usually a wide range of voltage and current within which the same life distribution will be obtained for a given junction temperature [14], although adverse effects can be obtained a t extremes of either condition. For the diode represented in Fig.…”

Section: Field Experiencementioning

confidence: 59%

The reliability of semiconductor devices in the bell system

Peck¹,

Zierdt²

1974

Proc. IEEE

102

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Abstracf-The history of reliability of semiconductor devices in the Bell System is a story of sequential application of principlesfirst, of reliability-enhancing processing principles, which are applied in the absence of completely knowledgeable design and testing control; second, of testing-control principles, which follow growing knowledge of process defects and their susceptibility to exposure by test; third, of ,design-control principles, which derive from mature processing and the essentially automatic elimination of workmanship defects. These principles were generally applied to the design and reliability technologies of successive decades of semiconductor-device manufacture.The 1950's saw the development of new device designs with no really severe reliability requirements; a history of this period shows, in fact, that semiconductor devices were better than reasonable testing specifications could prove they were; although one of the reliability advances of that period was promoted by Bell Laboratoriesthe use of a sampling technique which provided the user a statistical guarantee of the reliability he was buying.The 1960's saw the implementation of, first, the manufacture of diffused devices capable of high-stress testing and, second, the use of high-stress burn-in and life-testing controls which were rigorously relatable to expected reliability at the low stress of application. The motivating forces behind this high-stress testing were the need for low-failure-rate devices and the recognition that such failure rates, of the order of 0.001 percent per thousand hours, could not be proved by life tests at the stresses of the application.The technology of the 1970's is that of the beam-lead sealedjunction device, representing elimination by design of the major failure mechanisms of the devices of the 1960's. Although the elimination of the need for a hermetic seal raised the additional need for demonstration of the ability of a device and its plastic coating to survive in a high-humidity environment, this demonstration was also found to be amenable to physically based relationships between humidity and temperature conditions and device life.The successful development of relationship between effective device test requirements and system life objectives is attributed to the Bell System interrelationships by which the device designer is responsible both to the user (the system designer), with whom he has agreed upon a reliability objective, and to the device manufacturing organization, to which he owes the most economical combination of processes, process controls, and h a l testing requirements to meet the system objective.T I The possibility of error or confusion becomes greater when dealing this slow-but-sure procedure are as follows:with small fractions like 0.001 percent, and the accepted failure-rate term in the Bell System has become the failure unit, or FIT, equal to one fail-1) The extremely rapid pace of technology changes, reure in 10' device-hours. Where a distinction is made between removals quiring r...

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Section: Field Experiencementioning

confidence: 59%

The reliability of semiconductor devices in the bell system

Peck¹,

Zierdt²

1974

Proc. IEEE

102

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“…Once the diode and the characteristic to analyse is chosen, it is proposed to carry out an accelerated test increasing the temperature [8], [9] y [10], also known as an HTRB (High Temperature Reverse Bias) test. The derating rules will be applied as reverse biased diode, limiting the maximum reverse voltage and it will be studied how this extends life of the devices.…”

Section: Methodsmentioning

confidence: 99%

Failure Rate Measurement on Silicon Diodes Reverse Polarized at High Temperature

et al. 2017

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This paper calculates the failure rate on reversed polarized silicon diodes with the aim to justify, experimentally, the rules of the European Space Agency (ESA) which are referred to the component life's extension, the reliability increase and the end of life performance enhancement, by using oversized devices (derating rules). In order to verify the derating rules, 80 silicon diodes are used, which are reverse polarized in a high temperature environment. The diodes are divided in 4 groups of 20 diodes, applying a different voltage to each group, in order to relate the failure rate to the applied derating rule. The experiment described in this paper is developed using a temperature accelerated test to check the leakage current in reverse polarization (HTRB -High Temperature Reverse Bias), with the purpose of obtaining results applying an acceleration factor in order to reduce the test duration. By using a thermal model of the whole system and the equations that describe the reverse polarized diode behaviour, it is possible to stress the 80 diodes up to very high temperature avoiding the runaway effect. Finally, the failure rate is calculated and a revision of the derating rules are proposed by using the experimental result obtained.

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Application of Power Step Stress Techniques to Transistor Life Predictions

Cited by 2 publications

References 0 publications

The reliability of semiconductor devices in the bell system

The reliability of semiconductor devices in the bell system

Failure Rate Measurement on Silicon Diodes Reverse Polarized at High Temperature

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