Application of porous silicon microcavity to enhance photoluminescence of ZnO/PS nanocomposites in UV light emission

Abstract

This paper presents ZnO nanostructures deposited on porous silicon (PS) and porous silicon microcavity (PSM) substrates by sol-gel method. The effects of annealing temperature and mass ration of zinc acetate to PVA on microstructure, and optical properties of ZnO/PS and ZnO/PSM nanocomposites were systematically investigated by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. The XRD analysis confirmed that the ZnO/PS nanocomposite preferred strongly to (002) phase orientation. The PL spectra showed that there was a sharp and highly intense UV emission peak located at about 400 nm when annealing temperature was 800 o C for 30 min and the mass ratio of zinc acetate to PVA was 4:1. The detail cross-section FESEM images of ZnO/PSM showed that ZnO nanoparticles uniformly penetrated into all PS layers and adhered to them very well. Furthermore, ZnO/PSM nanocomposites showed relatively stronger UV emissions at around 400 nm compared to the PL spectra of ZnO/PS nanocomposites, that means one-dimension phonic crystal PSM can enhance the PL intensity of ZnO. Such a method may provide an interesting way to develop a new type of UV optoelectronic devices.

Enhancing DSSC Performance through Manipulation of the Size of ZnO Nanorods

“…Furthermore, high-temperature sintering is required during the fabrication process to form a porous TiO 2 film, making its application on flexible substrates difficult. Zinc oxide (ZnO) possesses a broad bandgap akin to TiO 2 , with an electron mobility that is 2–3 orders of magnitude greater than that of TiO 2 . − Additionally, it is easy to fabricate ZnO with various multidimensional structures such as nanofibers, nanorods (NRs), and nanocones. This can lead to an increase in the surface area available for dye adsorption, an improvement in carrier transport, and a decrease in recombination.…”

In-Situ Piezoelectric Effect for Augmenting Performance of Self-Powered ZnO-Based Photodetector

“…As a result, one of the key elements is selecting an appropriate semiconductor material that is responsible for the photon-to-carrier convention. Zinc oxide (ZnO), which has unique physical and chemical properties, has become a well-known and environmentally friendly semiconductor owing to its wide direct bandgap (E g ≈ 3.37 eV), thermal stability, high electron mobility (166 cm 2 /Vs), and high room-temperature excitonic binding energy (~60 meV) [9][10][11]. In particular, the synthesis roadmap for ZnO-based UV PDs comprises several methods, such as spin coating, dip coating, drop casting, spray pyrolysis, sputtering, atomic layer deposition (ALD), and chemical vapor deposition (CVD).…”

Toward Industrial Production of a High-Performance Self-Powered Ultraviolet Photodetector Using Nanoporous Al-Doped ZnO Thin Films

“…Moreover, the scalability of Ga-based devices is hindered due to the fact that gallium constitutes only 0.0005% of the Earth’s crust . In constrast, ZnO is regarded as an excellent candidate for practical and scalable optoelectronics owing to a wide bandgap (∼3.37 eV), high thermal and chemical stability, and abundance in the Earth’s crust. , Because of its n-type nature, ZnO is widely utilized as either a photoactive or an electron-transfer component for UV photodetectors. To improve the performance of ZnO-based detectors, several studies have focused on introducing trivalent metal cations such as Al and Ga to increase the electron mobility and concentration of ZnO, thus enhancing the device performance. − In this study, we chose Al-doped ZnO (AZO) as the n-type photoactive constituent for the UV detector.…”