Application of Polymers to Photoresist Materials

Soyano, Akimasa

doi:10.2324/gomu.85.33

Cited by 6 publications

(5 citation statements)

References 9 publications

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“…The deprotected group will then leave the thin layer as volatile isobutene. The quencher’s role is related to the enhancement of the pattern resolution (during the development) by neutralizing acids in the dark region and reducing their diffusion from exposed regions to unexposed regions …”

Section: Methodsmentioning

confidence: 99%

SIMS Analysis of Thin EUV Photoresist Films

et al. 2022

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This study reports on the application of secondary ion mass spectrometry (SIMS) for examining thin (20−50 nm) chemically amplified resist films on silicon. SIMS depth profiling was carried out using a gas cluster ion beam to ensure minimal sputter-induced damage to the organic constituents of interest. Specific attention concerned the distribution of the photo acid generator (PAG) molecule within these films, along with the photo-induced fragmentation occurring on extreme ultra-violet photo exposure. Positive secondary ion spectra were collected using a traditional time of flight (ToF)-SIMS and the latest generation IONTOF Hybrid SIMS instrumentation equipped with an Orbitrap TM mass analyzer. Tandem mass spectrometry (MS/ MS) capability within the Orbitrap TM secondary ion column was utilized to verify that the C 19 H 17 S + secondary ion did indeed have the molecular structure consistent with the PAG structure. The superior mass resolving power of the Orbitrap TM mass analyzer (∼20× of the ToF mass analyzer) along with improved mass accuracy (a few ppm) proved pivotal in the mass spectral and depth profile analysis of these films. This was not the case for the ToF-SIMS experiments, as the mass spectra, as well as the associated depth profiles, exhibited severe molecular (isobaric) interferences.

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Section: Methodsmentioning

confidence: 99%

SIMS Analysis of Thin EUV Photoresist Films

et al. 2022

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“…Their chemical structures are illustrated in figure 2. The base polymer has a (meth)acrylic backbone with protective sidegroups [46][47][48]. A so-called water shedding agent (WSA) is added to the resist in order to increase the water contact angle for immersion lithography.…”

Section: Methodsmentioning

confidence: 99%

Electrical surface charge patterns induced by droplets sliding over polymer and photoresist surfaces

He¹,

Darhuber²

2019

J. Micromech. Microeng.

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We have studied the generation of surface charge distributions on polymer surfaces due to the deposition, motion and evaporation of liquid droplets. Using liquids with different static dielectric constants, we found that the magnitude of the surface charge conforms well to the Boltzmann relation for the dissociation probability of ions in solution, indicating that the phenomenon is electrokinetic in nature. The origin of the sensitive dependence of the surface charge on the substrate thickness was identified to be an image charge effect. Experiments on polycarbonate and chemically-amplified photoresist yield surface charges of opposite polarity. By varying the photoresist composition, we identified the leaching of negative quencher ions as the reason for the charge inversion.

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“…Figure 4(a) shows the UV spectra of alkaline-treated resists with and without US treatment compared with the non-alkaline-treated resists. 18) Comparing relative intensity of absorbance at 400 nm, which indicates absorbance of the benzene ring in naphthoquinone diazide (sensitizer), 20) and based on absorbance at 210 nm, which indicates absorbance of the benzene ring in phenol resin, 21) relative intensity increased to 0.31 for dip alkaline-treated resists, while the relative intensity for non-alkaline-treated resists was 0.29. Furthermore, relative intensity for US alkaline-treated resists increased to 0.46.…”

Section: Effects Of Alkaline Treatment and Us Alkaline Treatmentmentioning

confidence: 99%

Resolution capability of resist patterns and throughput using alkaline treatment under ultrasonic irradiation

Onishi¹,

Miyake²,

Shirai³

2022

Jpn. J. Appl. Phys.

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Alkaline treatment of the photoresist under ultrasonic irradiation has been investigated to improve the resolution capability of resist patterns with higher throughput. The selectively dissolved phenol resin for the combination of the alkaline treatment with ultrasonic irradiation was increased by 2.3 times compared to the solely alkaline treatment. The sensitizing effect of naphthoquinone diazide (sensitizer) based on phenol was increased to 0.46 against dip treatment of 0.31. As a result, resist sensitivity was increased to 26% and the resolution capability was drastically improved. Consequently, the 0.5 μm line and space resist patterns were resolved completely with fine profile by using the photoresist with a 0.7　μm resolution limit together with g-line exposure machine with a 0.6 μm resolution limit. As a consequence, a high throughput of 25 wafers/min was achieved, which was more than 25 times higher than that of electron beam (EB) lithography.

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Application of Polymers to Photoresist Materials

Cited by 6 publications

References 9 publications

SIMS Analysis of Thin EUV Photoresist Films

SIMS Analysis of Thin EUV Photoresist Films

Electrical surface charge patterns induced by droplets sliding over polymer and photoresist surfaces

Resolution capability of resist patterns and throughput using alkaline treatment under ultrasonic irradiation

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