Application of photosensitive BARC and KrF resist on implant layers

Owe-Yang, Dah-Chung; Ho, Bang-Ching; Miyazaki, Syuji; Katayama, Tomohide; Susukida, Kenji; Kang, Wenbing; Chang, Yung-Cheng

doi:10.1117/12.534735

Cited by 9 publications

(2 citation statements)

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“…Developer-soluble BARCs (DBARCs) are different than traditional dry-etch BARCs in that DBARCs are patterned with the resist during the develop step (1,3). The original application for DBARCs was to enhance the patterning of implant layers (3,4,5). These initial DBARCs developed isotropically and were adjustable by process modifications (6).…”

Section: Introductionmentioning

confidence: 99%

Use of DBARCs Beyond Implant

Washburn

Lowes²,

Guerrero³

2011

ECS Trans.

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Almost a decade ago, the integrated circuit (IC) industry realized that traditional implant layers required new technology to achieve the specifications of the shrinking design rules and increased topography effects. In response, developer-soluble bottom antireflective coatings (DBARCs) were introduced as a solution. DBARCs offered the resolution and critical dimension (CD) control needed for the increasingly critical implant layers.In this paper the benefits DBARCs can bring to other lithographic processes are reviewed. Back-end-of-line (BEOL) dual damascene processes are surveyed. Front-end-of-line (FEOL) processes are examined, including high-k metal gate (HKMG), double patterning, and spacer. All processes are defined, and the value that a DBARC brings to each process is examined, along with potential challenges.

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Section: Introductionmentioning

confidence: 99%

Use of DBARCs Beyond Implant

Washburn

Lowes²,

Guerrero³

2011

ECS Trans.

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“…Photosensitive DBARCs have photoimageable properties and resolve patterns irrespective of upper resist layer [9][10][11][12][13][14][15][16][17][18]. Therefore, they have better resolution and through-pitch performance which are required for logic devices and critical layers.…”

mentioning

confidence: 99%