Application of phosphine tellurides to the preparation of Group II-VI (2-16) semiconductor materials

“…They originate from the work first done by Steigerwald [38] to find chemical routes for synthesizing bulk solid state materials. These convenient precursors are easily prepared by dissolving S, Se or Te powder in neat TOP, yielding TOPS, TOPSe or TOPTe stock solutions with concentrations in the *1 M range.…”

Section: Synthesis Of Cdse Nwsmentioning

confidence: 99%

Synthesis and Application of Solution-Based II–VI and IV–VI Semiconductor Nanowires

Tongying

Zhukovskyi

Kuno

2015

Anisotropic Nanomaterials

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Semiconductor nanowires (NWs) possess unique optical and electrical properties due to their anisotropic shape as well as their size-tunable electronic structure. In this chapter, we discuss the solution phase synthesis of II-VI and IV-VI semiconductor nanowires (e.g. ZnSe, CdS, CdSe, CdTe, PbS, PbSe, and PbSe x S 1−x ) as well as NW-based heterostructures involving core/shell and metal nanoparticle-decorated morphologies. We subsequently discuss the application of these materials within the context of nanowire yarns, nanowire-functionalized cotton textiles, and renewable energy applications involving nanostructured solar cells and photocatalytic hydrogen generation.

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“…11 The reaction between triethylphosphine telluride and mercury metal was investigated, giving mercury telluride (HgTe) in almost quantitative yields. 10 This reaction suggested the assignment of the phosphine telluride as a single coordinate complex of Te(0). Since elemental metals are not normally utilised as precursors, the reaction was repeated using the metal alkyl diethylmercury (Et 2 Hg) and the less volatile diphenylmercury (Ph 2 Hg).…”

mentioning

confidence: 96%

“…Initial reports on alternative precursors described the suitability of trimethylphosphine (Me 3 P) as a tellurium transport agent 8,10 and as a potential replacement for dialkyltellurides. 11 The reaction between triethylphosphine telluride and mercury metal was investigated, giving mercury telluride (HgTe) in almost quantitative yields.…”

mentioning

confidence: 99%

The Preparation of II–VI Semiconductor Nanomaterials

2014

Semiconductor Quantum Dots

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Although nanoparticles (notably metals) can be traced to antiquity, the origins of modern semiconductor quantum dots (QDs) is a much later development. Specic advances in quantum-conned semiconductor particles can be traced to Grätzel, 1 who reported the synthesis of colloidal CdS to examine photo-corrosion, and Brus 2 who notably reported the band edge luminescence of the same material. At approximately the same time, Ekimov reported quantum connement in CuCl prepared in a silica glass, 3,4 while Henglein, an early pioneer of colloidal semiconductors, reported the synthesis of CdS on colloidal SiO 2 . 5 Fendler then reported the use of a reverse micelle to prepare CdS nanoparticles, 6 which was importantly improved on by Henglein, who used polyphosphates as a well-dened passivating agent, allowing nanoparticles to be processed and redispersed. 7The work described above utilised mainly inorganic salts as precursors in aqueous-based reactions. Consequently, the low temperatures used and the presence of air and water oen resulted in polydispersed materials with relatively poor optical and crystalline properties. The small number of available suitable precursors also reduced the number of systems that could be explored. The need to improve these reactions by removing air and water dictated the use of organic-based starting materials; however, inorganic reagents such as Na 2 Se could not easily be used in organic solvents so alternatives were required.Independently, Steigerwald pioneered many of the early chemical routes to bulk solid-state materials, 8 inspired by the early work on the deposition of

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Application of phosphine tellurides to the preparation of Group II-VI (2-16) semiconductor materials

Cited by 57 publications

References 2 publications

CdS/CdSe core/sheath nanostructures obtained from CdS nanowires

CdS/CdSe core/sheath nanostructures obtained from CdS nanowires

Synthesis and Application of Solution-Based II–VI and IV–VI Semiconductor Nanowires

The Preparation of II–VI Semiconductor Nanomaterials

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