Application of OBIC and photoluminescence to the failure analysis of laser diode devices

A SOM approach to the failure physics of optoelectronic devices

“…[ 5 ] ,[6].The SOM analytical schemes rely on three main operative parameters : -the probe photon energy (i.e. the source wavelength)-the probe power -the device bias voltage.OBIC and PL are the optical analogous of EBIC The first parameter controls the spatial extension of Photogenerated minority carriers distribution in GaAs at a) 488 nm and b) 633 nm.…”