Application of micromechanical resonant structures for measuring the sealing of bonded sensor systems

Frömel, Jörg; Billep, Detlef; Geßner, Thomas; Wiemer, M.

doi:10.1007/s00542-005-0032-8

Cited by 8 publications

(6 citation statements)

References 3 publications

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“…For example, a typical frequency response of a single DOF micro mechanical resonator compared with its designed curve is shown in figure 1. The change of natural frequency is mainly originated from the variation of the spring stiffness or the mass of the resonator and the relationship between them is governed by (3).…”

Section: Analytical Modelmentioning

confidence: 99%

“…The change of natural frequency is mainly originated from the variation of the spring stiffness or the mass of the resonator and the relationship between them is governed by (3).…”

Section: Analytical Modelmentioning

confidence: 99%

“…Micromechanical resonators have been widely studied in various fields due to their small size, low power consumption and high sensitivity [1][2][3]. Usually, a resonator of single degree-of-freedom (DOF) measures a unique physical change (e.g., pressure, mass or stress) by tracking the shifting of its natural frequency.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of manufacturing variation in a coupled microresonators array based on its designed values and measured eigenfrequencies

2010

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Manufacturing variation in the micro fabrication process inevitably alters the size of the designed structure and thereafter influences the performance of devices to some extent. A good knowledge of this effect will help the design and optimization of the devices. In this paper, we propose an analytical model to investigate the effect of manufacturing variation on the individual resonator in a chain of coupled micro mechanical resonators. It is also used to estimate the variation caused by the manufacturing process based on the designed values and the measured eigenfrequencies.

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Section: Analytical Modelmentioning

confidence: 99%

“…The change of natural frequency is mainly originated from the variation of the spring stiffness or the mass of the resonator and the relationship between them is governed by (3).…”

Section: Analytical Modelmentioning

confidence: 99%

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Analysis of manufacturing variation in a coupled microresonators array based on its designed values and measured eigenfrequencies

2010

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“…One very promising method to monitor the hermeticity of a MEMS package is to measure the quality factor Q of an encapsulated resonator structure. A lot of research work has been done in this field so far [16], [17]. The key benefits of this approach are not only the chance to evaluate the long term stability of a sealed package by detection of comparatively low leak rates but also the possibility to monitor outgassing after the bonding process.…”

Section: Introductionmentioning

confidence: 98%

Hermeticity of eutectic bond layers for sensor packages on wafer-level

Schneider

Rank

Müller-Fiedler

et al. 2010

3rd Electronics System Integration Technology Conference ESTC

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In MEMS industry there is a high demand for reliable hermetic wafer-level encapsulation. This paper presents a methodology to monitor the pressure inside a package after the wafer-level bonding process. Therefore, novel micro-electro-mechanical resonators designed as double ended tuning forks (DETFs) were built to measure the quality factor Q as a function of the inside cavity pressure. Obtained experimental results clearly verified the feasibility of the developed MEMS structures, providing a simple method to evaluate the hermeticity of wafer bonding technologies

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“…Silicon has been already used to build electrically driven thin diaphragms with very high Q factor as high as 2.10 4 when operating in a vacuum system [11]. With these rigid clamping configuration and specific design, the Qfactor of etched resonant structure as MEMS may exceed nowadays 1.10 5 in vacuum [12,13]. For macroscopic membranes, silicon wafers could be used but rigid clamping is somewhat difficult to realize due to the relative brittleness of thin crystalline plates.…”

Section: Introductionmentioning

confidence: 99%

Carrier lifetime influence on clamped silicon wafer resonance by PTA effect

Chapus

Augereau²,

Podlecki³

et al. 2010

Eur. Phys. J. Appl. Phys.

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Photo acoustic effect, structural acoustic of membranes, resonance and damping of mechanical waves, vibration measurement, semiconductor devices) ABSTRACT This experimental work presents reproducible measurement conditions to allow amplification of the mechanical vibration generated by photo-thermo-acoustics (PTA) effect using the resonance of circular Silicon membranes clamped by nitrile o-rings on a diameter of 30mm (D i). We use wafers with various thickness (h) between 250 and 1000µm and with carrier lifetime between 3 and 30µs. Under the condition to have a resolution of few picometers for the measurement, it is possible to characterize the resonance mechanism obtained without contact by conventional laser vibrometry using a modulated laser diode of only a few milliwatts of power. Compared to perfect clamped membranes, the first Eigen frequency presents a downward shift of some hundreds Hertz due to the circular clamping by o-ring as predicted by our simplified model. The resonance frequency depends linearly on the thickness as long as D i /h>80. The quality factor (Q) does not exceed ten in agreement with our model for spring loaded membrane in air. The low value of quality factor and its variation according to thickness follow our predictions. Moreover, Q is independent of carrier lifetime whereas first resonance amplitude increases with it but less than prediction for bulks.

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Application of micromechanical resonant structures for measuring the sealing of bonded sensor systems

Cited by 8 publications

References 3 publications

Analysis of manufacturing variation in a coupled microresonators array based on its designed values and measured eigenfrequencies

Analysis of manufacturing variation in a coupled microresonators array based on its designed values and measured eigenfrequencies

Hermeticity of eutectic bond layers for sensor packages on wafer-level

Carrier lifetime influence on clamped silicon wafer resonance by PTA effect

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