2013
DOI: 10.3390/e15051663
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Application of Maximum Entropy Method to Semiconductor Engineering

Abstract: Abstract:The maximum entropy method (MEM) is widely used in research fields such as linguistics, meteorology, physics, and chemistry. Recently, MEM application has become a subject of interest in the semiconductor engineering field, in which devices utilize very thin films composed of many materials. For thin film fabrication, it is essential to thoroughly understand atomic-scale structures, internal fixed charges, and bulk/interface traps, and many experimental techniques have been developed for evaluating th… Show more

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Cited by 8 publications
(8 citation statements)
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“…The importance of MEM reconstruction starting by ARXPS data, for example, in semiconductors field, was highlighted in the last years by Yonamoto 39 who applied MEM data processing not only to ARXPS data, but also to thermally stimulated current, isochronal annealing (IA), and thickness-dependent CV (cyclic voltammetry) data, proving that MEM allows an easy extraction of important information for understanding the physics of devices.…”
Section: Introductionmentioning
confidence: 99%
“…The importance of MEM reconstruction starting by ARXPS data, for example, in semiconductors field, was highlighted in the last years by Yonamoto 39 who applied MEM data processing not only to ARXPS data, but also to thermally stimulated current, isochronal annealing (IA), and thickness-dependent CV (cyclic voltammetry) data, proving that MEM allows an easy extraction of important information for understanding the physics of devices.…”
Section: Introductionmentioning
confidence: 99%
“…In physics, the particle distribution of maximum entropy corresponds to the macrostate that has the most microstates. The successes of the MaxEnt principle have been demonstrated in various applications in the study of condensed matters [12][13][14][15][16][17].…”
mentioning
confidence: 99%
“…Experimentally it can be done by employing partial heating method as well as thermal cleaning method [1,4], and these are widely used. analyzing MIS capacitors with a structure of Al/SiaNb/Si, TSCs due to single electron de-trapping from single trap has been well discriminated [40].…”
Section: Development Of Tsc Technologymentioning
confidence: 99%