1999
DOI: 10.1016/s0040-6090(99)00094-2
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Application of ITO films to photocatalysis

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Cited by 102 publications
(54 citation statements)
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“…Zinc oxide (ZnO), an important II-VI semiconductor with a bandgap of 3.37 eV and a large exciton binding energy of 60 meV, has been extensively studied because of its potential applications in solar cells, [1] sensors, [2,3] photocatalysis, [4] etc. Over the past few years, tremendous efforts have been made to synthesize diverse nanometer-scaled ZnO building blocks (e.g., nanoparticles, nanowires, nanobelts, nanotubes, and nanosheets) with controlled sizes and morphologies.…”
Section: Introductionmentioning
confidence: 99%
“…Zinc oxide (ZnO), an important II-VI semiconductor with a bandgap of 3.37 eV and a large exciton binding energy of 60 meV, has been extensively studied because of its potential applications in solar cells, [1] sensors, [2,3] photocatalysis, [4] etc. Over the past few years, tremendous efforts have been made to synthesize diverse nanometer-scaled ZnO building blocks (e.g., nanoparticles, nanowires, nanobelts, nanotubes, and nanosheets) with controlled sizes and morphologies.…”
Section: Introductionmentioning
confidence: 99%
“…Especially, for the past few years, substantial efforts have been devoted to control the architecture and spatial patterning of metal oxide semiconductor materials. Among various transition metal oxides and their derivatives, zinc oxide (ZnO) have attracted a great deal of interest because of their intriguing optical, electronic, and mechanical properties and potential applications in optoelectronics, photonics, field emission, energy conversion, catalysis, and sensors [3][4][5][6][7].…”
Section: Introductionmentioning
confidence: 99%
“…Nanocrystalline ZnO as a wide band semiconductor has attracted more and more attention over the past few years due to its potential applications in solar cells [1], chemical sensors [2], photocatalysis [3], optoelectronics [4], and field emission [5]. Especially zinc oxide is thought to be the most suitable material for an ultraviolet (UV) laser device due to its direct wide band gap (3.37 eV) and large exciton binding energy (60 meV).…”
Section: Introductionmentioning
confidence: 99%