Application of heat pipe technology to crystal growth

Research on macro- and microsegregation in semiconductor crystals grown from the melt under the direction of August F. Witt at the Massachusetts Institute of Technology

“…The application of heat pipes in crystal growth to provide improved heat transfer control was first proposed by Steininger and Reed [17]. Witt and co-workers implemented a heat pipe in the hot zone of a Czochralski system to provide axisymmetric and repeatable azimuthal, radial, and axial thermal gradients [18].…”

GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinement

“…Thus, the following eigenvalue equation results: (17) In Eq. (17) the three parameters Kl' K 2 , and y depend only on the propagation constant {3 for given refractive indices and wavelength as given by Eqs. (4), (7), and (9).…”

“…(17), it is neces£ary to assign values for the complex refractive index N, which is defined by J. Appl. Phys., Vol.…”

“…Also, the gain in the GaAs layer is sufficiently small not to influence the solution of Eq. (17) for the configurations and material parameters considered here. In the remainder of this paper N will be taken as real.…”

Application of a Heat Pipe to Czochralski Growth: Part I : Growth and Segregation Behavior of Ga‐Doped Ge

“…While the isothermal characteristics of the central portion of heat pipe cavities (9) have been made use of for vapor growth and liquid phase epitaxy, its application to Czochralski growth is based on the existence of an axisymmetric radial gradient in the upper portion of the cavity. While the isothermal characteristics of the central portion of heat pipe cavities (9) have been made use of for vapor growth and liquid phase epitaxy, its application to Czochralski growth is based on the existence of an axisymmetric radial gradient in the upper portion of the cavity.…”