2004
DOI: 10.4218/etrij.04.0103.0143
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Application of GaAs Discrete p-HEMTs in Low Cost Phase Shifters and QPSK Modulators

Abstract: The application of a discrete pseudomorphic high electron mobility transistor (p‐HEMT) as a grounded switch allows for the development of low cost phase shifters and phase modulators operating in a Ku band. This fills the gap in the development of phase control devices comprising p‐i‐n diodes and microwave monolithic integrated circuits (MMICs). This paper describes a discrete p‐HEMT characterization and modeling in switching mode as well as the development of a low‐cost four‐bit phase shifter and direct quadr… Show more

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Cited by 3 publications
(1 citation statement)
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“…2 shows the proposed SRG&PD circuit. The pHEMT devices in the SRG&PD are biased to operate at the drain-source voltage 0 V, a cold bias of the pHEMT [6]. When 0 V and 0 V, the Rx path is connected and the Tx path is shut-off.…”
Section: Introductionmentioning
confidence: 99%
“…2 shows the proposed SRG&PD circuit. The pHEMT devices in the SRG&PD are biased to operate at the drain-source voltage 0 V, a cold bias of the pHEMT [6]. When 0 V and 0 V, the Rx path is connected and the Tx path is shut-off.…”
Section: Introductionmentioning
confidence: 99%