Application of Focused Ion Beam Techniques to the Fabrication of Lateral-Type Thin-Film Edge Field Emitters

Abstract

The effect of argon ion implantation has been studied in the Bi,Sr,CaCu,O, bulk high-T, superconducting system. The incident energy has been kept at 150 keV and the irradiation dose varied between 1 x IO" ions/cm2 and 1 x IO'= ions/cm'. It has been observed that the transition temperature does not change appreciably up to a dose of 1 x IO'=' ions/cm2. The variation of normal state resistance with ion dose shows a weak oscillatory nature which is also reflected in the variation of the c-axis parameter as determined by x-ray diffraction studies. The results are discussed in t h e light of the role of defect creation bearing in mind the similarity of the sizes of t h e Ar ions and Ca atoms in the superconducting system. It is proposed that due to this similarity between the two species, the defects created do not alter the properties very drastically, in contrast to the case of Ne and N implantation.

A Quasi-Planar Thin Film Field Emission Diode

“…2) Gotoh et al employed a focus ion beam (FIB) technique for the fabrication of lateral-type thin-film edge field emitters. 3,4) Lee et al proposed a novel sub-micron gap fabrication technology using chemical-mechanical polishing (CMP) to fabricate lateral field emission devices. 5) However, a low throughput is generally limited for the fabrication processes via EBL and FIB techniques.…”