Application of electrolytic in-process dressing (ELID) grinding and chemical mechanical polishing (CMP) process for emerging hard–brittle materials used in light-emitting diodes

Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst

“…One candidate method of producing smooth surfaces is chemical mechanical polishing (CMP) with colloidal silica slurry [5][6][7][8][9][10][11][12]. However, little is known of the type of damage induced by CMP on GaN surfaces and only a few reports [9,11] exist on CMP processes that can achieve atomically smooth GaN surfaces with atomic steps required for subsequent epitaxial growth.…”

Polishing characteristics and mechanism in magnetorheological planarization using a permanent magnetic yoke with translational movement

“…(4) and (7), the values of VRR could then be estimated using Eq. (12). The calculated VRR values were replotted against work gap, excitation gap and CIPs concentration in Fig.…”

“…Nevertheless, lapping often requires long processing time, as well as large and continuous supply of lapping slurry. Also, as the loose abrasives used are not always uniformly distributed during lapping, the resultant load concentration on the workpiece can easily cause subsurface damage [11,12].…”

Mathematical model-based evaluation methodology for environmental burden of chemical mechanical planarization process

“…Thus, the MRR model for the CMP process can be written as (9) where MRR mech is the pure mathematical removal rate by particles without the aid of chemical reaction and V re is the average relative velocity of the wafer. K(T) in Eq.…”

“…Chemical mechanical planarization (CMP) is the main process in semiconductor manufacturing because of its global and local planarization ability 7,8 and surface smoothing ability. 9 The CMP process is recognized as one of the dirtiest and most expensive processes in semiconductor fabrication. The wastewater of the CMP process is composed of several kinds of organic and inorganic materials.…”