Abstract:To extend the application of ArF exposure tool, CPL is one of the most powerful technologies for the resolution enhancement. From previous study, the 2 nd level writing by E-Beam writer has been developed to ensure the manufacturability of CPL process [1]. To fulfill the application of CPL Mask, we implemented this technology for 65nm DRAM patterning. First we studied the performance and characteristics of CPL mask with optimized exposure illumination setting for the desired pattern and dimension of 65nm DRAM.… Show more
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