Application of an optimization tool for inverse modelling of thin-film silicon solar cells

Ostertag, Julia P.; Petersen, Andreas; Schmidt, Oliver T.; Brüggemann, R.

doi:10.1016/j.egypro.2011.10.189

Cited by 3 publications

(4 citation statements)

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“…An accurate estimation of these parameters is essential in evaluating and predicting the performance of the solar cells; improving the design, optimization, control, and fabrication processes; and in device modeling and simulation [15]. On this point, inverse modeling is an extremely useful technique for determining the set of input parameters that fits best to the desired output behavior [16]. In order to avoid the need for a large number of simulations (or iterations), optimization techniques can be used to extract the unknown input parameters.…”

Section: Extraction Of the Minority Carrier Transport Properties Of S...mentioning

confidence: 99%

Extraction of the minority carrier transport properties of solar cells using the Hovel model and genetic algorithms

Cappelletti

Cédola

Olivera

et al. 2019

Meas. Sci. Technol.

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In this paper, a quick and accurate method for extraction of the minority carrier transport properties of p-n or n-p junction solar cells, such as diffusion lengths and surface recombination velocities, is presented. The knowledge of these parameters is essential to investigating factors that limit the performance of photovoltaic devices. The proposed method, based on genetic algorithms and the analytical Hovel model, is used to fit the external quantum efficiency (EQE) curves of solar cells with different emitter thicknesses. As a demonstrative example of application of the procedure carried out in this work, theoretical and experimental EQE curves of n-p GaAs solar cells under the standard AM1.5G spectrum have been used in order to extract the desired parameters. Errors less than 2.4% have been obtained, which shows the capability of the developed tool. An analysis of the total number of iterations is presented. The results obtained can be used to improve the design, optimization, and manufacturing process of high-efficiency photovoltaic devices.

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Section: Extraction Of the Minority Carrier Transport Properties Of S...mentioning

confidence: 99%

Extraction of the minority carrier transport properties of solar cells using the Hovel model and genetic algorithms

Cappelletti

Cédola

Olivera

et al. 2019

Meas. Sci. Technol.

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“…A standard set of electronic input parameters had been determined by inverse modeling . Some of these parameters such as band gap, series resistance, and defect density were adapted, within physically reasonable limits, until good agreement between simulation and experiment was reached for the illuminated jV characteristics and the EQE of the top and bottom cell (160 nm top cell/1750 nm bottom cell) without IRL.…”

Section: Simulationmentioning

confidence: 99%

“…A standard set of electronic input parameters had been determined by inverse modeling [16]. Some of these parameters such as band gap, series resistance, and defect Figure 4(a) illustrates the calibrated simulation with good agreement between simulation and experiment of the three EQEs of the reference tandem cells.…”

Section: Basic Simulation Model and Calibrationmentioning

confidence: 99%

“…Other than with rigorous simulation methods, the one‐dimensional absorption profile of a given layer stack can be calculated within seconds on a desktop computer. The short computation times are essential, for example, for inverse modeling for the extraction of electronic parameters . In this procedure, several 10,000 simulation runs are needed.…”

Section: Introductionmentioning

confidence: 99%

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Experimental and simulation study of thin film silicon solar cells with intermediate reflector

Ostertag

Ramsteiner

Schmidt

et al. 2013

Prog. Photovolt: Res. Appl.

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Optical and electrical simulations were carried out for thin film silicon solar tandem cells with intermediate reflector layer (IRL) between top and bottom cell and compared with experimental external quantum efficiency and current voltage characteristics results. Reference data were collected from a series of tandem cells with different thicknesses of the top cell absorber layer (160–240 nm), the bottom cell absorber layer (1750–2100 nm), and the transparent conductive oxides based IRL (10–80 nm). It turned out that for capturing correctly the influence of the IRL on the light management as a function of the IRL thickness, the conventional semicoherent approach is not sufficient. Whereas the optical properties of a very thin IRL are governed by interference effects that are best calculated using a fully coherent model, increasingly thicker IRL show a more and more incoherent behavior. By taking into account, the interface morphology and angular light distribution within the cell stack an algorithm for the effective IRL reflectivity was proposed that explains the experimental findings very well. The consecutive electrical simulations were carried out with the device simulator ASA. The dependence of short circuit current density jsc and fill factor FF on the thickness dIRL of the IRL is in qualitative agreement between simulation and experiment showing coincident extrema in jsc(dIRL) and FF(dIRL) at the current matching point. Copyright © 2013 John Wiley & Sons, Ltd.

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Parameter determination for device simulations of thin film silicon solar cells by inverse modeling based on temperature and spectrally dependent measurements

Ostertag

Klein

Schmidt

et al. 2013

Journal of Applied Physics

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Opto-electronic device simulation of thin-film silicon solar cells requires a set of many input parameters for the electronic properties of amorphous and microcrystalline silicon. In this paper, a systematic determination of these is performed by inverse modeling and particle swarm optimization with experimental and simulated current-voltage characteristics of amorphous and microcrystalline silicon pin diodes, both in the dark and under illumination. The parameters are validated by additional experiments and simulations of the temperature-dependent dark current, of spectrally selective illumination, and of the external quantum efficiency of the amorphous and microcrystalline silicon diode, respectively. The validation of the input parameters is complemented by simulation of a tandem solar cell with the amorphous and the microcrystalline silicon input parameters. Simulation and experiment (spectrally dependent current-voltage characteristics and external quantum efficiency) of such a tandem solar cell show good agreement. Sensitivity studies on different sets of input parameters for the inverse modeling process are also presented.

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Application of an optimization tool for inverse modelling of thin-film silicon solar cells

Cited by 3 publications

References 1 publication

Extraction of the minority carrier transport properties of solar cells using the Hovel model and genetic algorithms

Extraction of the minority carrier transport properties of solar cells using the Hovel model and genetic algorithms

Experimental and simulation study of thin film silicon solar cells with intermediate reflector

Parameter determination for device simulations of thin film silicon solar cells by inverse modeling based on temperature and spectrally dependent measurements

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