Application of a Continued-Fraction-Based Theory to Line-Profile in Mn-Doped GaN Film

Abstract

Starting with the Kubo formalism and using the projection operator technique (POT) introduced by Kawabata, the optical quantum transition line-profiles (QTLPs) formula for a Mn-doped wurtzite GaN film was derived as a function of temperature at a frequency of 9.49 GHz (X-band), on the basis of continued fraction representation (CFR) which is a counterpart of the conventional series expansion (CSE). Utilizing this formula we obtained the fine-structure parameter a - F = 9.4 ×10-4 cm-1 and fitting parameter ζ= 4.1. The optical quantum transition half-widths (QTHWs) obtained with the use of these parameters agrees quite well with the existing experimental result in the temperature region T > 20 K. The QTHWs increase with increasing temperature due to the interaction of electrons with optical phonons. Thus, the present technique is considered to be more convenient to explain the resonant system as in the case of other optical transition problems.

Magneto-optical Transitions in Electron-Piezoelectric Phonon Scattering Materials Using Projected Liouville Equation

“…In our previous studies [8][9][10][11][12][13][14], we applied the EAPT theory to Ge and Si, because there are abundant experimental data on nonconfining deformation potential systems. We also compared our numerical calculation results using the EAPT theory with the existing experimental data and found them to be in good agreement with each other.…”