The formation of oxide-ceramic coatings on rectifying metals in the metal-electrolyte system under the action of an external electric field includes several stages. The first stage consists in the formation of the primary oxide film according to the electrochemical mechanism. The electrochemical activity of the rectifying metals decreases in the row Mg, A1, Ti, Nb, Ta, and these metals remain at the beginning of the passivity row. A characteristic feature of the anodic behavior of the rectifying metals is the absence of the active region of dissolution, which is due to their electronic structure. In the metal-electrolyte systems, they give off their d-electrons and transform into ions with rearranged d-levels. These ions react with the oxygen dissolved in electrolyte, OH radicals, or water, forming surface oxide films. Anodic oxide films are amorphous and poreless, and they have ionic conductivity and high electrical resistance. They are classified [1] as n-semiconductors with a wide forbidden band. The electrons are not transferred through the passive layers on the rectifying metals [2,3]. The only reaction on the anode at a voltage of up to 100 V is the anodic growth of oxide. In this case, the overvoltage of the oxide formation is less than the voltage of the decomposition of the electrolyte. When the latter is reached, the injection of electrons into the oxide layer takes place, and oxygen begins to evolve on the anode [4]. This corresponds to the beginning of the second stage of the formation of the spark discharge channel in the metal-oxide-electrolyte system. The mechanisms of breakdown and the parameters of the discharge channel can be different [5,6], depending on the material of the electrode and the nature of the interelectrode space. In the case of realization of the spark discharge in the metal-oxide-electrolyte system under the action of a direct-current electric field, the metal serves as an anode, and the electrolyte serves as a cathode. The interelectrode space consists of the oxide and the double electric layer on the oxide-electrolyte boundary. The main drop of the potential is at the oxide interlayer where the electric field intensity is high [7]. At as low electric field intensity as 105 V/m, the high-energy electrons can cause the galvanoluminescence of the oxides [8]. For the electrons to have, under the action of the electric field, the acceleration necessary for breaking down the wide-band oxide, their energy must be higher than 3Eg/2 (Eg is the width of the forbidden band). These electrons have energy sufficient for ionizing the atoms, which results in the appearance of new electrons. When the coefficient of reproduction exceeds unity, electronic avalanche arises. The ionized atoms that remain behind the avalanche create a practically stationary spatial charge which decelerates the electrons. Since, as was mentioned above, the potential drop is localized mainly in the oxide, and the oxides of the rectifying metals show the properties of wide-band semiconductors of n-type, for determining...