Application-based review of GaN HFETs

Jones, Edward A.; Wang, Fred; Ozpineci, Burak

doi:10.1109/wipda.2014.6964617

Cited by 135 publications

(59 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This is not desirable for voltage-source converters, because of the potential for shootthrough during startup or loss of control power. Several methods have therefore been used to fabricate normally-off GaN HFETs [7]. …”

Section: A Fundamental Hfet Structurementioning

confidence: 99%

“…Several review and survey papers have been published on the relative characteristics of WBG devices, including the benefits and design challenges associated with each [1]- [6]. Other reviews, such as [7]- [11], have specifically provided background on GaN power devices and GaN-based converter design. Some of these reviews focus on one particular GaN technology or research direction, rather than covering the full range of commercial devices available today.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Jones

Wang

Costinett

2016

IEEE J. Emerg. Sel. Topics Power Electron.

Self Cite

883

324

View full text Add to dashboard Cite

GaN power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. Additionally, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic Rds,on, breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters as these devices become increasingly available on a commercial scale.

show abstract

Section: A Fundamental Hfet Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Jones

Wang

Costinett

2016

IEEE J. Emerg. Sel. Topics Power Electron.

Self Cite

883

324

View full text Add to dashboard Cite

show abstract

“…1. The aim of the p-doped layer is to ensure an enhancement-mode operation [6] and realised in AlGaN (p-AlGaN) to prevent by hole injection [7] the switching from causing a current collapse.…”

Section: Set-up and Conditionsmentioning

confidence: 99%

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

Oeder

Castellazzi

Pfost

2017

Microelectronics Reliability

View full text Add to dashboard Cite

A B S T R A C TA study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit.

show abstract

“…On the other hand, in most PEAs the switching devices are required to exhibit a normally-off operation. The usage of insulated-or p-doped gates (p-gate) [1] is one of the key technological solutions to achieve that.…”

Section: Introductionmentioning

confidence: 99%

Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT

Oeder

Castellazzi

Pfost

2017

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

View full text Add to dashboard Cite

Abstract-In this paper, the short-circuit robustness of a normally-off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific gate-drive circuit design and corresponding device operational conditions is demonstrated. A gate-bias dependence (GBD) of the failure, correlated to the applied drain-source voltage, is introduced as a novel specific feature for the p-Gate type device.

show abstract

Application-based review of GaN HFETs

Cited by 135 publications

References 21 publications

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT

Contact Info

Product

Resources

About