Appearance of negative resistance in p-n junction structures in a microwave field

Usanov, D. A.; Skripal, A. V.; Ugryumova, N. V.

doi:10.1134/1.1187600

Cited by 7 publications

(4 citation statements)

References 2 publications

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“…At the input power оЁ 500 mW NDR reaches -20 Q, and т the feed circuit the lowfrequency oscillations оЁ ~200 kHz are initiated [8,9].…”

Section: Microwave Semiconductor Oscillatorsmentioning

confidence: 99%

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Nonlinear dynamics оf microwave and optical semiconductor oscillators

Usanov,

Skripal,

Skripal

et al. 2002

AND

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The results оf experimental аnd theoretical investigations of the nonlinear phenomena in microwave and optical semiconductor oscillators are represented. It is shown that one оf the reasons of occurrence оf various nonlinear phenomena in semiconductor devices оf the microwave range is qualitative change оf their voltage-current characteristics, in particular occurrence оr disappearance of sections оf negative differential resistance under the influence оf high-power microwave radiation оn semiconductor structures. The external optical feedback forming autodyne operating mode of semiconductor lasers acts as the priority mechanism оf realization of their nonlinear operating mode in semiconductor laser structures.

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“…At the input power оЁ 500 mW NDR reaches -20 Q, and т the feed circuit the lowfrequency oscillations оЁ ~200 kHz are initiated [8,9].…”

Section: Microwave Semiconductor Oscillatorsmentioning

confidence: 99%

“…The experimental voltage-current characteristics оЁ а tunnel diode аг the different values оЁ microwave power are shown in Fig. 4 [11].…”

Section: Microwave Semiconductor Oscillatorsmentioning

confidence: 99%

Nonlinear dynamics оf microwave and optical semiconductor oscillators

Usanov,

Skripal,

Skripal

et al. 2002

AND

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“…[1] [2] studied the current-voltage characteristics (CVC) and investigated the variation of photoelectric characteristics of silicon p-n-junctions in strong microwave fields. And in [3] [4], the results of theoretical and experimental studies of the effect of occurrence of negative differential resistance of the diode structures based on p-njunction theoretically described experimentally observed effect of occurrence of negative differential resistance mode and switch to the tunnel diode when exposed to high levels of microwave power. EMF of hot carriers U oc , generated at unsymmetrical p-n-junction in the microwave electromagnetic field, despite the fact that the electron temperature much higher than that of the holes is determined by the hot holes [5].…”

Section: Introductionmentioning

confidence: 99%

Influence of Deformation on CVC p-n-Junction in a Strong Microwave Field

Dadamirzayev¹

2015

JMP

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“…Of special interest among these studies are those dealing with effect of microwave radiation on parameters of semiconductor devices. Such studies are aimed at either search for new technological procedures [1,3,6,7] or investigation of mechanisms for semiconductor device degradation [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures

Abdizhaliev¹

2003

Semicond. Phys. Quantum Electron. Optoelectron.

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We studied I-V curves of Au-TiB x-n-n +-GaAs and Au-TiB x-n-SiC 6Í surface-barrier structures. The structures were exposed to microwave treatments (frequency of 2.45 GHZ, irradiance of 1.5 W/cm 2 , duration of 0500 s). For these structures we measured how the Schottky barrier height and ideality factor depended on microwave treatment duration. It was shown that microwave treatments whose duration are up to 20 s do not impair the main structure parameters, while those with duration of 0.510 s may even improve these parameters.

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Appearance of negative resistance in p-n junction structures in a microwave field

Cited by 7 publications

References 2 publications

Nonlinear dynamics оf microwave and optical semiconductor oscillators

Nonlinear dynamics оf microwave and optical semiconductor oscillators

Influence of Deformation on CVC p-n-Junction in a Strong Microwave Field

Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures

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