Apparatus for electrically detected electron nuclear double resonance in solid state electronic devices

We report on the electrical detection of electron nuclear double resonance (EDENDOR) through spin-dependent tunneling transport in an amorphous hydrogenated silicon thin film. EDENDOR offers a many orders of magnitude improvement over classical ENDOR and is exclusively sensitive to paramagnetic defects involved in electronic transport. We observe hyperfine interactions with 1H nuclei very close to silicon dangling bond defects. These observations substantially extend recent EDENDOR observations involving silicon vacancy defects and 14N hyperfine interactions with fairly distant nitrogen atoms in 4H-SiC bipolar junction transistors. We have improved the detection scheme utilized in the earlier study by combining magnetic field modulation with RF amplitude modulation; this combination significantly improves the operation of the automatic power leveling scheme and the overall sensitivity.

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Ultra-low field frequency-swept electrically detected magnetic resonance

Ashton

Manning

Barker

et al. 2021

Journal of Applied Physics

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We have developed a new ultra-low field frequency-swept (FS) electrically detected magnetic resonance (EDMR) spectrometer to perform sensitive EDMR measurements of 4H-silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors at sub-millitesla (mT) magnetic fields. The new spectrometer design enables the detection of so-called ultra-strong coupling effects such as multiple-photon transitions and Bloch–Siegert shifts. In this paper, we present a new spectrometer design and discuss ultra-low field FS-EDMR sensitivity to both multiphoton transitions and Bloch–Siegert shifts of the FS-EDMR response. FS-EDMR effectively eliminates the interference of the sub-mT EDMR response from a near-zero field magnetoresistance (NZFMR) phenomenon that pervades the sub-mT regime in a magnetic field-swept EDMR scheme. We discuss an automatic power leveling scheme, which enables frequency sweeping. We also present results illustrating the Bloch–Siegert shift of the FS-EDMR response. Finally, we study the two-photon transition line shape in the 4H-SiC transistor as a function of the static field, in which we observe a collapse of the two-photon linewidth with decreasing static field and compare our results to the theory of two-photon absorption in EDMR.

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Apparatus for electrically detected electron nuclear double resonance in solid state electronic devices

Cited by 4 publications

References 19 publications

Electrically detected electron nuclear double resonance in amorphous hydrogenated boron thin films

Electrically detected electron nuclear double resonance in amorphous hydrogenated boron thin films

Observation of electrically detected electron nuclear double resonance in amorphous hydrogenated silicon films

Ultra-low field frequency-swept electrically detected magnetic resonance

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