Aperture based Raman spectroscopy on SiGe film structures with high spatial resolution

Mai, Christian; Zhu, Liang; Hecker, M.; Rinderknecht, J.; Georgi, Carsten; Ritz, Y.; Zschech, Ehrenfried

doi:10.1002/jrs.1852

Cited by 5 publications

(5 citation statements)

References 19 publications

(14 reference statements)

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“…Raman spectra of the Ge x Si 1– x samples were measured and are shown in Figure . The broad bands correspond to the expected values for the homogeneous bond vibrations in Si and Ge at 521 and 298 cm –1 , respectively. − For the intermediate Ge x Si 1– x phases, characteristic bands of Si–Si, Si–Ge, and Ge–Ge vibrations are present . When the Ge content increases, the Si–Si vibration band shifts to lower frequencies (from 521 to 490 cm –1 ), and when the Si content increases, the Ge–Ge vibration band also shifts to lower frequencies (from 298 to 275 cm –1 ).…”

Section: Resultssupporting

confidence: 60%

Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge_xSi_1–x Electrodes for Li Ion Batteries

et al. 2015

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While silicon is attractive due to its high capacity, germanium possesses a superior electronic and ionic conductivity, and is able to support much higher cycle rates. In the present paper, we investigate the electrochemical performances of Ge x Si 1−x -based electrodes with x = 0, 0.25, 0.5, 0.75, and 1. The Ge x Si 1−x samples are easily prepared by short ball milling. X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy−energy-dispersive X-ray spectrometry confirm that Si/Ge solid solutions are obtained with different ratios. We show that appropriate formulations of Ge x Si 1−x electrodes can produce excellent cycling performances, with an increased capacity retention compared to that of Sibased electrodes only, and with higher capacity than that of Ge-based electrodes cycled in the same conditions. For Ge 0.1 Si 0.9 , a capacity of 1138 (mA h)/g is retained after 50 cycles, and is stabilized around 1020 (mA h)/g after 100 cycles. Moreover, a limited irreversible capacity is lost on the first discharge. The electrochemical data suggest that the copresence of Si and Ge in the same phase creates a synergistic beneficial effect on the Ge x Si 1−x electrochemical performances. The electrochemical behavior of Ge x Si 1−x is investigated for the first time by in situ XRD, and an original mechanism is highlighted with the reversible formation of a new Li 15 (Si x /Ge y ) 4 ternary phase at the end of discharge. Interestingly, a decrease of the cell parameter of this ternary phase is observed continuously from the end of discharge to the beginning of charge, which might be correlated to a loss of germanium of the lithiated Li 15 (Si x /Ge y ) 4 phase.

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Section: Resultssupporting

confidence: 60%

Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge_xSi_1–x Electrodes for Li Ion Batteries

et al. 2015

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“…155 SNOM was applied for Raman microscopy on dyes, 135 thin films, 158,161 and semiconductors such as SiGe. 157 Lines of various widths etched in SiGe by focused ion beam were imaged by SNOM and a lateral resolution of 200 nm was achieved. 157 SNOM can deliver spatial resolution at the nanoscale, but the technique suffers from the low signal collected, particularly for Raman spectroscopy.…”

Section: Scanning Near-field Optical Microscopy (Snom) With Aperturementioning

confidence: 99%

“…157 Lines of various widths etched in SiGe by focused ion beam were imaged by SNOM and a lateral resolution of 200 nm was achieved. 157 SNOM can deliver spatial resolution at the nanoscale, but the technique suffers from the low signal collected, particularly for Raman spectroscopy. 155,162 The light transmission coefficient through an aperture in a conducting plane was predicted to depend on the aperture diameter a and the wavelength λ as (a/λ) 4 .…”

Section: Scanning Near-field Optical Microscopy (Snom) With Aperturementioning

confidence: 99%

Invited Review Article: Combining scanning probe microscopy with optical spectroscopy for applications in biology and materials science

Lucas

Riedo

2012

Review of Scientific Instruments

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This is a comprehensive review of the combination of scanning probe microscopy (SPM) with various optical spectroscopies, with a particular focus on Raman spectroscopy. Efforts to combine SPM with optical spectroscopy will be described, and the technical difficulties encountered will be examined. These efforts have so far focused mainly on the development of tip-enhanced Raman spectroscopy, a powerful technique to detect and image chemical signatures with single molecule sensitivity, which will be reviewed. Beyond tip-enhanced Raman spectroscopy and/or topography measurements, combinations of SPM with optical spectroscopy have a great potential in the characterization of structure and quantitative measurements of physical properties, such as mechanical, optical, or electrical properties, in delicate biological samples and nanomaterials. The different approaches to improve the spatial resolution, the chemical sensitivity, and the accuracy of physical properties measurements will be discussed. Applications of such combinations for the characterization of structure, defects, and physical properties in biology and materials science will be reviewed. Due to the versatility of SPM probes for the manipulation and characterization of small and/or delicate samples, this review will mainly focus on the apertureless techniques based on SPM probes.

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“…The practical application of the technique is illustrated on a silicon-on-insulator (SOI) microelectronic structure. Mai et al [240] have employed metallic apertures in combination with Raman spectroscopy to obtain high-spatial strain resolution below the diffraction limit. With this set-up, which uses apertures cut into specifically shaped and electrochemically etched tungsten tips, the authors investigated line structures on patterned silicon-germanium films and showed that their set-up has a large potential for further near-field Raman applications.…”

Section: Special Raman Techniques and Methods Including Ters And Datamentioning

confidence: 99%

Recent advances in linear and non‐linear Raman spectroscopy. Part III

Kiefer

2009

J Raman Spectroscopy

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Following the first two reviews on recent advances in linear and non-linear Raman spectroscopy, the present review summarises papers mainly published in the Journal of Raman Spectroscopy during 2008. This again serves to give a brief overview of recent advances in this research field and to provide readers of this journal a quick introduction to the various sub-fields of Raman spectroscopy. It also reflects the current research interests and trends in the Raman community.

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Aperture based Raman spectroscopy on SiGe film structures with high spatial resolution

Cited by 5 publications

References 19 publications

Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge_xSi_1–x Electrodes for Li Ion Batteries

Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge_xSi_1–x Electrodes for Li Ion Batteries

Invited Review Article: Combining scanning probe microscopy with optical spectroscopy for applications in biology and materials science

Recent advances in linear and non‐linear Raman spectroscopy. Part III

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Aperture based Raman spectroscopy on SiGe film structures with high spatial resolution

Cited by 5 publications

References 19 publications

Synergistic Effects of Ge and Si on the Performances and Mechanism of the GexSi1–x Electrodes for Li Ion Batteries

Synergistic Effects of Ge and Si on the Performances and Mechanism of the GexSi1–x Electrodes for Li Ion Batteries

Invited Review Article: Combining scanning probe microscopy with optical spectroscopy for applications in biology and materials science

Recent advances in linear and non‐linear Raman spectroscopy. Part III

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Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge_xSi_1–x Electrodes for Li Ion Batteries

Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge_xSi_1–x Electrodes for Li Ion Batteries