2023
DOI: 10.1021/acsanm.3c02569
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Antisymmetric Peaks Observed in the Hall Resistance of Fe5GeTe2 Ferromagnets: Implications for Spintronic Devices

Ying Zhang,
Shasha Wang,
Yan Feng
et al.

Abstract: is a van der Waals ferromagnetic metal, which has a Curie temperature at room temperature higher than that of Fe 3 GeTe 2 . Despite extensive studies on Fe 5 GeTe 2 's performance, its magnetism remains poorly understood, particularly the in-plane electrical transport and angle dependence, which have not been reported yet. In this paper, we report angle-dependent Hall resistance and magnetoresistance in Fe 5 GeTe 2 flakes, demonstrating that the Hall resistance shows an antisymmetric peak when the magnetic fie… Show more

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Cited by 2 publications
(2 citation statements)
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“…Therefore, constructing hardware-based neuromorphic computing systems based on neuromorphic devices through emulating the structural characteristics of BNNs is an efficacious approach to break the limitations imposed by von Neumann bottleneck, and realize high-efficiency and low-energy data processing. Various kind of neuromorphic devices, including memristors [129][130][131][132][133], transistors [51,[134][135][136][137][138][139], memtransistor [140][141][142][143][144][145][146], spintronic devices [147][148][149][150][151], and phase-change memory [152][153][154][155][156][157] had been developed. Memristor and neuromorphic transistor are two most common devices for mimicking the synaptic behaviors.…”
Section: Neuromorphic Devicesmentioning
confidence: 99%
“…Therefore, constructing hardware-based neuromorphic computing systems based on neuromorphic devices through emulating the structural characteristics of BNNs is an efficacious approach to break the limitations imposed by von Neumann bottleneck, and realize high-efficiency and low-energy data processing. Various kind of neuromorphic devices, including memristors [129][130][131][132][133], transistors [51,[134][135][136][137][138][139], memtransistor [140][141][142][143][144][145][146], spintronic devices [147][148][149][150][151], and phase-change memory [152][153][154][155][156][157] had been developed. Memristor and neuromorphic transistor are two most common devices for mimicking the synaptic behaviors.…”
Section: Neuromorphic Devicesmentioning
confidence: 99%
“…In recent years, vdW materials have become a research hotspot in condensed matter physics and materials science due to their unique electronic structures and physical properties. Among them, the exploration of vdW room-temperature ferromagnets is particularly important in promoting the development of spintronics devices, quantum computing, and information storage. The H C , as an important property indicator of magnetic materials, is determined by the energy of magnetic anisotropy and magnetic domain nucleation and growth. , Hard ferromagnetic materials with large H C have broad applications in permanent magnets, magnetic recording, magnetic sensors, biomedicine, and other fields. …”
mentioning
confidence: 99%