Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers

Desrat, Wilfried; Kamara, Souleymane; Terki, F.; Charar, S.; Sadowski, J.; Maude, D. K.

doi:10.1088/0268-1242/24/6/065011

Cited by 16 publications

(11 citation statements)

References 18 publications

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“…Antisymmetric MR is uncommon, but it has been reported to have occurred in two different systems. The first was composed of single-layer magnetic thin films with perpendicular anisotropy (39,40). In a magnetic thin film with perpendicular anisotropy, two single magnetic domains separated by a 180° domain wall are formed.…”

Section: Resultsmentioning

confidence: 99%

Antisymmetric magnetoresistance in van der Waals Fe ₃ GeTe ₂ /graphite/Fe ₃ GeTe ₂ trilayer heterostructures

et al. 2019

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With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next-generation spintronic devices. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in vdW heterostructured Fe3GeTe2 (FGT)/graphite/FGT devices. Unlike conventional giant MR (GMR), which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high-, intermediate-, and low-resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three-resistance behavior was attributed to a spin momentum locking induced spin-polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures.

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Section: Resultsmentioning

confidence: 99%

Antisymmetric magnetoresistance in van der Waals Fe ₃ GeTe ₂ /graphite/Fe ₃ GeTe ₂ trilayer heterostructures

et al. 2019

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“…Different mechanisms are proposed to understand the MR effects in magnetic materials, however these effects share the common symmetry with respect to magnetization reversal, namely MR (H) = MR (−H). It is believed that the variation of multi-domain configuration during magnetization reversal process with MR (H) = -MR (−H) anomaly contributes to antisymmetric MR[43][44][45]. However there are mixed reports regarding the experimental conditions required for the observation of antisymmetric MR[43- 45].…”

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confidence: 99%

Antisymmetric magnetoresistance and helical magnetic structure in a compensated Gd/Co multilayer

et al. 2019

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Using spin dependent specular and off-specular polarized neutron reflectivity (PNR), we report the observation of a twisted helical magnetic structure with planar 2π domain wall (DW) and highly correlated magnetic domains in a Gd/Co multilayer. Specular PNR with polarization analysis reveals the formation of planar 2πDWs below a compensation temperature (T Comp ), resulting to positive exchange bias in this system. Off-specular PNR with spin polarization showed development of magnetic inhomogenities (increase in magnetic roughness) for central part (thickness ~ 25-30 Å) of each Gd layer, where magnetization is aligned perpendicular (in-plane) to an applied field. These magnetic roughness are vertically correlated and results into Bragg sheet in spin flip channel of Offspecular PNR data, which is contributing towards an antisymmetric magnetoresistance at T Comp in the system. The growth and tunability of highly correlated magnetic inhomogeneities (roughness) and domain structure around T Comp in combination of twisted helical magnetic structure with planar 2πDWs will be key for application in all-spin-based technology.The current-induced manipulation of magnetic order through spin-orbit torque (SOT) has recently attracted great interest for the realization of magnetic memory and logic application devices with fast switching [1][2][3][4][5]. The Dzyaloshinskii-Moriya interaction [6], and the spin Hall effect via heavy-metal layers [7-9] were the major phenomena that attributed for large chiral spin torques. Exchange coupling torque (ECT) recently showed a significant enhancement of the spin-torque efficiency in artificial antiferromagnetic (AF) structures [10,11], which allows moving nanoscale magnetic domain walls (DW) with current at large velocities [10].The compensated rare earth (RE)-transition metal (TM) alloys and heterostructures,where the RE and TM moments are aligned antiparallel due to the strong AF interaction and the total net moment tends to zero, are potential candidate materials for realizing devices with higher speed and density [12][13][14][15][16]. A class of ferrimagnets consisting of RE-TM alloys and heterostructures also have the potential to exhibit DW motion via an ECT [17,18]. Fast switching in compensated systems can further be influenced by magnetic [16,19] and optical [20] fields. Recently Vedmedenko et al. [21], have pointed out theoretically that nano-sized stable magnetic helices can be used for magnetic energy storage. Realization of magnetic helices with stable magnetic properties have also been studied theoretically [22] and experimentally [23] in exchange-coupled thin films and RE/TM multilayers, respectively. It is recognized that magnetization reversal and a magnetic helical configuration (planar 2πDWs) in RE-TM multilayer with no external magnetic field around the compensation temperature (T Comp , the temperature at which total moments of RE-TM multilayer tend to zero) is the key to manipulating magnetic devices [20,23]. However the response of interface DWs in RE-TM heterostr...

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“…The Ga 1-x Mn x As layers were growth by a molecular beam epitaxy at 230 ºC on a semi-insulating GaAs(001) substrates using the KRYOVAK MBE system at MAX-Lab, Lund University, Sweden [14,15]. The growth was performed with As 2 flux generated from an arsenic valve cracker source.…”

Section: Methodsmentioning

confidence: 99%

Tunable magnetic anisotropy in epitaxial GaMnAs films: Evidence of temperature control

Dehbaoui¹,

Kamara²,

Hung³

et al. 2017

Adv. Mater. Lett.

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The magnetic field dependencies of Hall resistance are studied for Ga 0.94 Mn 0.06 As/In 0.15 Ga 0.85 As film. The Hall resistance shows a slanted hysteresis cycle, emphasizing the existence of both in-plane and out-of-plane magnetization components. The anisotropy constants of the sample with out-of-plane magnetization are extracted from the angular dependence of Hall resistance measurements. The angular dependence of free magneto-crystalline energy theoretical analysis allows us to confirm the dominance of uniaxial magnetic anisotropy at specific temperatures. Here, precise angular dependence of magnetoresistance Hall Effect measurements and careful analysis using free energy model, enable us to demonstrate how the magnetic easy axis could be reoriented by the temperature within the ferromagnetic phase at the temperature far from the Curie Weiss value. This promising property will offer applicative opportunity of GaMnAs material with temperature induced transition of easy magnetization axis in detection of weak magnetic fields within the cryogenic range of low temperature phenomenon.

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Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers

Cited by 16 publications

References 18 publications

Antisymmetric magnetoresistance in van der Waals Fe ₃ GeTe ₂ /graphite/Fe ₃ GeTe ₂ trilayer heterostructures

Antisymmetric magnetoresistance in van der Waals Fe ₃ GeTe ₂ /graphite/Fe ₃ GeTe ₂ trilayer heterostructures

Antisymmetric magnetoresistance and helical magnetic structure in a compensated Gd/Co multilayer

Tunable magnetic anisotropy in epitaxial GaMnAs films: Evidence of temperature control

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Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers

Cited by 16 publications

References 18 publications

Antisymmetric magnetoresistance in van der Waals Fe 3 GeTe 2 /graphite/Fe 3 GeTe 2 trilayer heterostructures

Antisymmetric magnetoresistance in van der Waals Fe 3 GeTe 2 /graphite/Fe 3 GeTe 2 trilayer heterostructures

Antisymmetric magnetoresistance and helical magnetic structure in a compensated Gd/Co multilayer

Tunable magnetic anisotropy in epitaxial GaMnAs films: Evidence of temperature control

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Antisymmetric magnetoresistance in van der Waals Fe ₃ GeTe ₂ /graphite/Fe ₃ GeTe ₂ trilayer heterostructures

Antisymmetric magnetoresistance in van der Waals Fe ₃ GeTe ₂ /graphite/Fe ₃ GeTe ₂ trilayer heterostructures