Antiresonant reflecting optical waveguide-type vertical-cavity surface emitting lasers: comparison of full-vector finite-difference time-domain and 3-D bidirectional beam propagation methods

Elkin, N. N.; Napartovich, Anatoly P.; Troshchieva, V.N.; Vysotsky, D. V.; Lee, Tae‐Woo; Hagness, Susan C.; Kim, Nam-Heon; Bao, Ling; Mawst, Luke J.

doi:10.1109/jlt.2006.871122

Cited by 6 publications

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“…In this structure, the low-index core region is surrounded by a pair of quarter-lateral wave reflector regions, which are designed to be antiresonant for the fundamental mode and higher order modes, which do not meet the antiresonant condition suffer large lateral losses and are suppressed. It is expected that only the fundamental mode will be supported inside ARROW V p c p T " [197,198,199,200,201,202,203,204] Figure 5-7 Schematic of an ARROW VCSEL However, it was observed experimentally that high-order transverse LMs could still be excited in ARROW VCSELs at high injection current ^197^. This is due to the reduction of radiation loss margin (i.e., radiation loss difference between fundamental and high-order transverse LMs) by the influence of nonlinear effects such as carrier spatial hole burning (SHB) [2(bl and thermal lensing [206].…”

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confidence: 99%

Design and fabrication of zinc oxide multilayers light emitting devices

Tsang¹

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Chapter 2 Literature Review CJapter 2 LlTERATURE REVIEW 2.1 Zinc Oxide ZnO has gained substantial interest in semiconductor research because o f its wide band gap (-3.4eV) and also its large exciton binding energy (-60meV). These made ZnO a favorable candidate for UV semiconductor laser, especially for room-temperature operation. As such, we have chosen ZnO as our platform for random lasers studies in this thesis. Researches on ZnO can be traced back to many decades. Material characterizations such as lattice parameters were investigated as early as 1935 [2 8 ,2 9 ,3 0 ,3 1 ,3 2 ,3 3 ] A J s o^ 0 ptical properties and processes in ZnO were studied intensively. [34'35,36,37'38'391 One of the main reasons that attracted attentions to ZnO is because o f its large exciton binding energy, which paves the way for an intense near band edge excitonic emission at room or even higher temperature. This is because the binding energy is almost 2.4 times larger than the thermal

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