Abstract:In this work, we have demonstrated antimonene as a saturable absorber to generate ultrafast mode-locked and Q-switched laser at a 2-micron wavelength region. The two antimonene-based SAs were prepared and inserted separately in a thulium-holmium doped fiber laser (THDFL) to produce the pulsed lasers. Antimonene was coated onto the tapered fiber to generate soliton mode-locked pulses and in thin-film form for the generation of Q-switched pulses. The modelocking was stable within the pump power of 267 to 511 mW,… Show more
“…Xue et al [ 19 ] assembled antimonene nanosheets on the surface of a gold chip using layer-by-layer technology and found that the sensitivity of antimonene to the SPR sensor varies with different thicknesses, which is defined as the ratio of the change in resonance angle to the change in the refractive index of the analyte, which is at least 2.3 times higher than existing miRNA sensors, even many orders of magnitude higher. It has a high refractive index in ultraviolet [ 20 ] and nonlinear characteristic behaviors [ 21 , 22 ] in optical properties and has applications in lasers [ 23 , 24 ] and laser protection [ 25 ].…”
Antimonene has attracted much attention due to its excellent characteristics of high carrier mobility, thermoelectric properties and high stability. It has great application prospects in Q-switched lasers, laser protection and spintronics. At present, the epitaxy growth of antimonene mainly depends on molecular beam epitaxy. We have successfully prepared antimonene films on silicon, germanium/silicon substrates for the first time using electron beam evaporation coating and studied the effects of the deposition rate and substrate on the preparation of antimonene; film characterization was performed via confocal microprobe Raman spectroscopy, via X-ray diffraction and using a scanning electron microscope. Raman spectroscopy showed that different deposition rates can lead to the formation of different structures of antimonene, such as α phase and β phase. At the same time, it was found that the growth of antimonene is also affected by different substrates and ion beams.
“…Xue et al [ 19 ] assembled antimonene nanosheets on the surface of a gold chip using layer-by-layer technology and found that the sensitivity of antimonene to the SPR sensor varies with different thicknesses, which is defined as the ratio of the change in resonance angle to the change in the refractive index of the analyte, which is at least 2.3 times higher than existing miRNA sensors, even many orders of magnitude higher. It has a high refractive index in ultraviolet [ 20 ] and nonlinear characteristic behaviors [ 21 , 22 ] in optical properties and has applications in lasers [ 23 , 24 ] and laser protection [ 25 ].…”
Antimonene has attracted much attention due to its excellent characteristics of high carrier mobility, thermoelectric properties and high stability. It has great application prospects in Q-switched lasers, laser protection and spintronics. At present, the epitaxy growth of antimonene mainly depends on molecular beam epitaxy. We have successfully prepared antimonene films on silicon, germanium/silicon substrates for the first time using electron beam evaporation coating and studied the effects of the deposition rate and substrate on the preparation of antimonene; film characterization was performed via confocal microprobe Raman spectroscopy, via X-ray diffraction and using a scanning electron microscope. Raman spectroscopy showed that different deposition rates can lead to the formation of different structures of antimonene, such as α phase and β phase. At the same time, it was found that the growth of antimonene is also affected by different substrates and ion beams.
“…These lasers can be formed in a linear or ring cavity [5]. The doped fibers of rare Earth ions such as thulium, holmium, or thulium-holmium are the suitable gain medium for 2 μm wavelength [6][7][8]. Thulium doped fiber laser (TDFL) can be pumped at 1550 nm having the emission at 1.9 μm.…”
Section: Introductionmentioning
confidence: 99%
“…However, these reports were limited to C-band as the erbium-doped fiber was used as a gain medium for their work. Moreover, due to their limited physical and chemical properties, the new SAs are still being explored [6,[32][33][34]. For instance, graphene has a low damage threshold, and BP can quickly oxidize, so its performance degrades when exposed to air.…”
Metal phosphates have emerged as low-cost inorganic materials suitable for high-performance energy storage and conversion devices. The photoluminescence properties of metal phosphates are now being explored for their optoelectronic applications. Among them, zinc phosphate is the composition of metal zinc and phosphoric acid. In this work, we have demonstrated the synthesis of zinc phosphate by the solvothermal method and its potential as a saturable absorber (SA) to generate a tunable mode-locked laser at 1.9 µm. Zinc phosphate was coated over arc-shaped fiber and incorporated in a thulium-holmium doped fiber laser (THDFL) to achieve the mode-locking. Soliton mode-locked pulses were achieved at a center wavelength of 1893 nm with the pulse duration, repetition rate, and signal-to-noise ratio (SNR) of 1.12 ps, 12 MHz, and 68 dB, respectively. The center wavelength of the mode-locked laser was tunable from 1893 to 1898.4 nm, and the pulse duration ranged between 1.12 to 1.4 ps. To the authors' knowledge, this is the first demonstration of a wavelength-tunable mode-locked laser using zinc phosphate as a SA at 1.9 µm.
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