Antiguided array diode lasers fabricated with modulated cap thin p-clad structure

Zory, J.S.O.P.; Schwartz, B. D.; Setzko, R.S.; Emanuel, M.A.; Sperry, V.

doi:10.1109/68.752533

Cited by 6 publications

(1 citation statement)

References 15 publications

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“…16 Array fabrication via modulating the cap-layer thickness, rather than etch and regrowth, has also provided narrow-beam, in-phase-like operation to drive levels at least 10Â threshold. 17 For mid-IR QCLs, spatial coherence over large apertures has been reported from so-called PCDFB structures, 18,19 flared master-oscillator power-amplifier (MOPA) structures, 20 tree-type arrays involving Y branches, 21,22 and from evanescent-wave-coupled arrays. 23 PCDFB devices involve diffraction gratings, thus, have inherently low index contrast (Dn ¼ 0.006-0.008) 18 and have shown near-D.L., single-lobe operation, at k ¼ 4.6 lm, to only 10% above threshold and 0.5 W/facet peak pulsed power.…”

Section: W Near-diffraction-limited Power From Resonant Leaky-wave Comentioning

confidence: 99%

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

Kirch

Chang

Boyle

et al. 2015

Applied Physics Letters

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Five, 8.36 μm-emitting quantum-cascade lasers (QCLs) have been monolithically phase-locked in the in-phase array mode via resonant leaky-wave coupling. The structure is fabricated by etch and regrowth which provides large index steps (Δn = 0.10) between antiguided-array elements and interelement regions. Such high index contrast photonic-crystal (PC) lasers have more than an order of magnitude higher index contrast than PC-distributed feedback lasers previously used for coherent beam combining in QCLs. Absorption loss to metal layers inserted in the interelement regions provides a wide (∼1.0 μm) range in interelement width over which the resonant in-phase mode is strongly favored to lase. Room-temperature, in-phase-mode operation with ∼2.2 kA/cm2 threshold-current density is obtained from 105 μm-wide aperture devices. The far-field beam pattern has lobewidths 1.65× diffraction limit (D.L.) and 82% of the light in the main lobe, up to 1.8× threshold. Peak pulsed near-D.L. power of 5.5 W is obtained, with 4.5 W emitted in the main lobe. Means of how to increase the device internal efficiency are discussed.

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Section: W Near-diffraction-limited Power From Resonant Leaky-wave Comentioning

confidence: 99%

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

Kirch

Chang

Boyle

et al. 2015

Applied Physics Letters

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Semiconductor quantum materials and their applications in electronics and optoelectronics

Willander

2001

Handbook of Advanced Electronic and Photonic Materials and Devices

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1.6 W continuous-wave coherent power from large-index-step (Δn≈0.1) near-resonant, antiguided diode laser arrays

Yang

Mawst

Botez

2000

Applied Physics Letters

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Near-diffraction-limited-beam continuous-wave (cw) operation has been achieved to high powers from antiguided arrays with a large effective-index step between element and interelement regions. InGaAs/InGa(As)P/GaAs 40-element arrays (λ=0.985 μm) emit in beams 2×diffraction-limit (0.67°) at 1.6 W and 9×threshold in cw operation. 1 W of the coherent cw power resides in the central lobe. The external differential quantum efficiency and the threshold current are 40% and 0.4 A, respectively, for 1-mm-long devices of 191 μm emitting aperture. The overall electrical to optical power conversion efficiency at 1.6 W output power is 23%. Modeling of the thermal effects in cw operation on the array modes reveals that for high-index-step (∼0.1) near-resonant antiguided arrays thermal lensing hardly affects high-order modes, and as a consequence, 2×diffraction-limited beams can be maintained to watt-range cw powers.

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Antiguided array diode lasers fabricated with modulated cap thin p-clad structure

Cited by 6 publications

References 15 publications

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

Semiconductor quantum materials and their applications in electronics and optoelectronics

1.6 W continuous-wave coherent power from large-index-step (Δn≈0.1) near-resonant, antiguided diode laser arrays

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