The electric resistivity in CuCr 2 Se 4 has been measured below room temperature under applied magnetic fields (H ) up to 1.0 T in the metallic ferromagnetic phase, in addition to magnetization measurements. The temperature dependence of the electric resistivity (ρ) shows an electric phase transition at about 65 K (T e ) and a different linearity of ρ -T curves in the regions of T < 60 K and T > 100 K. Both regions are metallic, while in the intermediate region 60 K < T < 100 K a semiconductor-like state occurs. The T e transition temperature slightly decreases from about 65 K to 59 K on increasing the magnetic field. The magnetoresistance (MR) shows a crossover to a positive value or a negative one below and above T e , though the MR-T curves depend on the magnetic fields. The magnetization curves deviate from a tentative Brillouin function at about 65 K (H = 50 G), 200 K (H = 400 G), 230 K (H = 800 G) and 170 K (H = 0.2 T), and a weak modulation at about 65 K to 70 K (T 1 ) under the magnetic fields. It is suspected that the magnetic transition occurring at T 1 is from a conical to a uniaxial ferromagnetic state on heating.The T e electric transition results from a slight change of a Zener band situation, which is induced by a spin-dependent double-exchange interaction at T 1 . The intermediate semiconductor-like state is between two different Zener band situations in the conical and uniaxial ferromagnetic states, which are both metallic.