Antiferromagnetic semiconductor Eu3Sn2P4 with Sn–Sn dimer and crown-wrapped Eu

Bławat, Joanna; Swatek, Przemysław; Gui, Xin; Jin, Rongying; Xie, Weiwei

doi:10.1039/c9tc03557e

Cited by 7 publications

(3 citation statements)

References 45 publications

(41 reference statements)

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“…Zero-field heat capacity as a function of temperature is shown in Figure 1a. Three transitions are identified at T N 1 = 9.3 K, T N 2 = 8.3 K, and T N 3 = 4.3 K. As shown in the inset of Figure 1, the entropy recovered at T N 1 is only 60% of the expected entropy for the J = S = 7/2 divalent europium multiplet, and the full Rln8 entropy is only recovered at ∼ 20 K. A similar entropy reduction has been observed in Zintl antiferromagnet Eu 3 Sn 2 P 4 , which also hosts divalent europium [23]. The missing entropy at T N 1 could be either caused by the presence of short-range interactions or by non-ordered europium ions.…”

Section: Resultssupporting

confidence: 62%

Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$

Fender¹,

Thomas²,

Ronning³

et al. 2021

Preprint

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Here we investigate the thermodynamic and electronic properties of Eu11InSb9 single crystals. Electrical transport data show that Eu11InSb9 has a semiconducting ground state with a relatively narrow band gap of 320 meV. Magnetic susceptibility data reveal antiferromagnetic order at low temperatures, whereas ferromagnetic interactions dominate at high temperature. Specific heat, magnetic susceptibility, and electrical resistivity measurements reveal three phase transitions at TN1 = 9.3 K, TN2 = 8.3 K, and TN3 = 4.3 K. Unlike Eu5In2Sb6, a related europium-containing Zintl compound, no colossal magnetoresistance (CMR) is observed in Eu11InSb9. We attribute the absence of CMR to the smaller carrier density and the larger distance between Eu ions and In-Sb polyhedra in Eu11InSb9. Our results indicate that Eu11InSb9 has potential applications as a thermoelectric material through doping or as a long-wavelength detector due to its narrow gap.

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Section: Resultssupporting

confidence: 62%

Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$

Fender¹,

Thomas²,

Ronning³

et al. 2021

Preprint

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“…7 to the experimental data of EuIn 2 As 2 are: ρ 0 = 0.18 mΩ cm, B = 1.1 × 10 −3 mΩ cm K −2 , and ∆ mag = 4.7 K. The parameter B is a material-constant, which is related to the spin wave velocity and the obtained value is of typical order. The upturn in ρ(T ) observed above the maximum resembles the behaviour reported in similar Eu-based compounds [26,40,41], which has been often attributed to a metalsemiconductor transition (see, e.g., Ref. [26]).…”

Section: Electrical Magnetotransportsupporting

confidence: 77%

Magnetic properties of the putative higher-order topological insulator EuIn$_2$As$_2$

Toliński

Kaczorowski

2023

SciPost Phys. Proc.

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In higher-order topological insulator (HOTI), a gap is preserved both for the bulk and the surface states, and only hinges or corners become gapless. Recently, it has been predicted that the antiferromagnetic compound EuIn_22As_22 can host both the HOTI and axion insulator features. Preliminary experimental confirmation of this finding was obtained using angle-resolved photoemission spectroscopy. The main objective of this work was to characterize the anisotropic magnetic properties of single-crystalline EuIn_22As_22. In addition, complementary studies on the transport properties, heat capacity, and magnetocaloric effect in this compound were performed.

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“…3 The Eu-Sn-P ternary system adds one electron but still contains a similar set of phases, including the anisotropic layered compound EuSn 2 P 2 (R 3m), 4 which forms in a different space group from EuIn 2 P 2 because the latter has an In-In bond to satisfy the Zintl concept of valence-precise bonding after donation of the Eu 2+ electrons. Orthorhombic Eu 3 Sn 2 P 4 (Cmca) also has a metamagnetic transition, 5 in analogy with the Incontaining compounds, and likewise the precise nature of the magnetic orderings is unclear. The same complexity arises in the double Eu layers of tetragonal Eu-SnP (P 4/nmm).…”

Section: Introductionmentioning

confidence: 99%

Unique structure type and antiferromagnetic ordering in semiconducting Eu2InSnP3

Gebre,

Jiang,

Riedel

et al. 2024

Preprint

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The multitude of bonding motifs that can arise from the main group elements in pnictides leads to ternary compounds with rare earths that span insulating and metallic behavior, layered and channeled compounds, and ferrimagnetic and antiferromagnetic ordering. Here we present the quaternary pnictide Eu2InSnP3, which forms in the orthorhombic space group Pnma. The Eu2+ ions in Eu2InSnP3 form a hollandite-like channeled matrix of edge-sharing EuP6 octahedra, while the interior of the channels are filled with ethane-like InSnP6 units. Despite the challenges in differentiating In and Sn by X-ray diffraction, their equimolar concentration and ordering in this compound is enforced by the need for charge balance, which leads to semiconducting behavior. First-principles simulations confirm the stability of the experimentally found crystal structure and show that the smallest gap to be indirect of about 0.5 eV, but close in energy to a direct gap. The magnetic behavior of Eu2InSnP3 is complex, with a low-field antiferromagnetic ordering at TN = 12 K and a spin-flop transition around 0.8 T at 2 K. The progression of magnetic states is complex, driven by the two inequivalent Eu sites in the compound and the low anisotropy of the 4f7 Eu ion.

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Antiferromagnetic semiconductor Eu₃Sn₂P₄ with Sn–Sn dimer and crown-wrapped Eu

Abstract: A novel antiferromagnetic semiconductor, Eu3Sn2P4, is discovered and prepared using Sn-flux method. The crystal structure shows that the six Sn–Sn dimers connected by P atoms form Sn12P24 crown-shape cluster with Eu atoms located in the center.

Cited by 7 publications

References 45 publications

Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$

Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$

Magnetic properties of the putative higher-order topological insulator EuIn$_2$As$_2$

Unique structure type and antiferromagnetic ordering in semiconducting Eu2InSnP3

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