Antiferromagnetic grain volume effects in metallic polycrystalline exchange bias systems

Vallejo-Fernández, G.; Fernandez-Outon, L.E.; O'Grady, K.

doi:10.1088/0022-3727/41/11/112001

Cited by 80 publications

(62 citation statements)

References 20 publications

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“…This confirms the tendency observed from the buffer series in figure 3 (the larger the grains, the wider the distribution). Moreover, it is in accordance with the results obtained in the literature [8,9], which showed how an increase of the IrMn thickness leads to an increase of the grain volume and a broadening of the distribution. The range of measured grain volumes fits well with those presented in the cited studies, thus confirming the validity of the measuring method.…”

Section: Fig 2 Normalized Frequency Distribution For Buffer Layer Ssupporting

confidence: 92%

“…In IrMn polycrystalline thin layers, an increase of the AF thickness causes an enhancement of the average grain lateral size and a broadening of its distribution [9]. It is also possible to tailor AF grain population by changing the sputtering rate [10], the process pressure [11], the annealing temperature [12,13] or the buffering layer [12][13][14][15].…”

Section: Methodology Of the Studymentioning

confidence: 99%

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Focused Kerr measurements on patterned arrays of exchange biased square dots

Vinai

Moritz

Gaudin

et al. 2014

EPJ Web of Conferences

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Abstract. Microstructural effects on the antiferromagnetic layer were investigated on IrMn/Co exchange biased square dots. IrMn grain size and distributions were tuned by changing Cu buffer layer or IrMn thicknesses. Lateral dimensions from 200 to 50nm were varied. Exchange bias (H ex ) variability was analysed through focused Kerr measurements on small groups of dots. Patterned samples presented average exchange bias values following the trends and values of full sheet samples. Concerning the dot to dot behaviour, it resulted that IrMn microstructure variations have minor effects on H ex variability, because no particular trend is observed as a function of grain size and distribution. The variability is attributed to geometry variation and Co intrinsic variability.

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Section: Fig 2 Normalized Frequency Distribution For Buffer Layer Ssupporting

confidence: 92%

Section: Methodology Of the Studymentioning

confidence: 99%

Focused Kerr measurements on patterned arrays of exchange biased square dots

Vinai

Moritz

Gaudin

et al. 2014

EPJ Web of Conferences

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“…The precise size depends, for example, on sample preparation, thickness, and postdeposition annealing. Examples of grains sizes for CoO and IrMn can be found in Molina-Ruiz et al (2011) and Vallejo-Fernandez, Fernández-Outón, and O'Grady (2008), respectively.…”

Section: B Magnetic Phase Transition and Finite-size Scalingmentioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

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“…From a more accurate observation of the temperature dependence, we emphasize that H B is very similar for all the samples at T = 7 K, with a sudden linear drop of this value for sample A up to T = 30 K. Assuming a granular character for our samples, this indicates that the size distribution of the AFM layer is strongly influenced by the Cu underlayer thickness. In fact, a thicker Cu layer may induce the presence of larger FeMn grains in the AFM layer which will be more magnetically stable at higher temperatures maintaining the exchange interaction with the upper FM layer [6]. In this respect, the linear drop at low temperature of the bias field for sample A must correspond to a significant small size component in its grain size distribution, not present in the other three samples.…”

Section: Joint European Magnetic Symposia 2012mentioning

confidence: 97%

Influence of Cu seed layer on the magnetization reversal in exchange-biased FeMn/FeCo systems

Cavicchia

D’Orazio

Rossi

et al. 2013

EPJ Web of Conferences

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Abstract. Magnetization hysteresis loops are measured on FeMn/FeCo bilayers. The existence of the exchange bias effect up to room temperature is guaranteed by the presence of copper as a seed layer. We demonstrate that the choice of the growth parameters for Cu allows the control of the magnetic response of the structure, tuning the coercivity and the exchange field. The switching field distribution suggests different magnetization reversal mechanisms during the ascending and descending branches of the hysteresis loop. The evident noisy character of the data, during the reversal of the magnetization with respect to the initially set orientation, supports the picture of domain wall motion involving pinned states at magnetic defects, contrasting with the coherent magnetic moments rotation along the opposite branch.

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Antiferromagnetic grain volume effects in metallic polycrystalline exchange bias systems

Cited by 80 publications

References 20 publications

Focused Kerr measurements on patterned arrays of exchange biased square dots

Focused Kerr measurements on patterned arrays of exchange biased square dots

Antiferromagnetic spintronics

Influence of Cu seed layer on the magnetization reversal in exchange-biased FeMn/FeCo systems

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