Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

Si, Yangyang; Zhang, Tianfu; Liu, Chenhan; Das, Sujit; Xu, Bin; Burkovsky, Roman G.; Wei, Xian-Kui; Chen, Zuhuang

doi:10.1016/j.pmatsci.2023.101231

Progress in Materials Science

2024

DOI: 10.1016/j.pmatsci.2023.101231

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Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

Yangyang Si,

Tianfu Zhang,

Chenhan Liu

et al.

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2024

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Cited by 7 publications

References 442 publications

(632 reference statements)

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Emerging Solid–State Thermal Switching Materials

Jia,

Li,

Chen

et al. 2024

Adv Funct Materials

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Growing technical demand for thermal management stems from the pursuit of high–efficient energy utilization and the reuse of wasted thermal energy, which necessitates the manipulation of heat flow with electronic analogs to improve device performance. Here, recent experimental progress is reviewed for thermal switching materials, aiming to achieve all–solid–state thermal switches, which are an enabling technology for solid–state thermal circuits. Moreover, the current understanding for discovering thermal switching materials is reshaped from the aspect of heat conduction mechanisms under external controls. Furthermore, current challenges and future perspectives are provided to highlight new and emerging directions for materials discovery in this continuously evolving field.

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Emerging Solid–State Thermal Switching Materials

Jia,

Li,

Chen

et al. 2024

Adv Funct Materials

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Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric

Conroy,

Småbråten,

Ophus

et al. 2024

Advanced Materials

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Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies show that the configuration of ferroelectric walls can go well beyond the conventional Ising‐type structure. Néel‐, Bloch‐, and vortex‐like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, the discovery of antiferroelectric domain walls in the uniaxial ferroelectric Pb5Ge3O11 is reported. Highly mobile domain walls with an alternating displacement of Pb atoms are resolved, resulting in a cyclic 180° flip of dipole direction within the wall. Density functional theory calculations show that Pb5Ge3O11 is hyperferroelectric, allowing the system to overcome the depolarization fields that usually suppress the antiparallel ordering of dipoles along the longitudinal direction. Interestingly, the antiferroelectric walls observed under the electron beam are energetically more costly than basic head‐to‐head or tail‐to‐tail walls. The results suggest a new type of excited domain‐wall state, expanding previous studies on ferroelectric domain walls into the realm of antiferroic phenomena.

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A Roadmap for Ferroelectric–Antiferroelectric Phase Transition

Jiang,

Tang,

Liu

et al. 2024

Nano Lett.

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Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

Cited by 7 publications

References 442 publications

Emerging Solid–State Thermal Switching Materials

Emerging Solid–State Thermal Switching Materials

Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric

A Roadmap for Ferroelectric–Antiferroelectric Phase Transition

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