Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices

Magri, Rita; Wang, L. W.; Zunger, Alex; Vurgaftman, I.; Meyer, J. R.

doi:10.1103/physrevb.61.10235

Cited by 40 publications

(36 citation statements)

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“…In the past decades, the properties of InAs/GaSb broken-gap supperlattices and quantum wells (QWs) were investigated both theocratically and experimentally 3,4,5,6,7,8,9,10,11,12,13,14 . These studies show that due to the overlap of InAs conduction band and GaSb valence band, the energy dispersion may exhibits an anticrossing behavior at a finite in-plane wave vector k 0 3,4,5,6,7,8,9,10 . The tunneling between InAs and GaSb layers opens a mini hybridization gap, which was observed experimentally 11,12,13,14 .…”

Section: Introductionmentioning

confidence: 99%

Spin states in InAs/AlSb/GaSb semiconductor quantum wells

Yang

Chang

2009

Phys. Rev. B

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We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those obtained by the single-band Rashba model due to the electron-hole hybridization. The Rashba spin-splitting of the lowest conduction subband shows an oscillating behavior. The D'yakonov-Perel' spin relaxation time shows several peaks with increasing the Fermi wavevector. By inserting an AlSb barrier between the InAs and GaSb layers, the hybridization can be greatly reduced. Consequently, the spin orientation, the spin splitting, and the D'yakonov-Perel' spin relaxation time can be tuned significantly by changing the thickness of the AlSb barrier.

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Section: Introductionmentioning

confidence: 99%

Spin states in InAs/AlSb/GaSb semiconductor quantum wells

Yang

Chang

2009

Phys. Rev. B

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“…level can then be located below the 1hh level at the zone center (with the carrier in plane wave vector k || = 0) [5]. The 1e and 1hh levels anticross and hybridize for k || ≠ 0, which has been observed experimentally [7,8] and studied theoretically [5,[9][10][11]. Laser genera tion in such thicker structures with hybridized elec tron hole states has been also proposed [8].…”

Section: Introductionmentioning

confidence: 94%

“…Theoretical study showed a strong depen dence of the optical matrix elements and absorption coefficients on the direction of light polarization in type I and type II heterostructures [9,10,[12][13][14][15]. This anisotropy is investigated here.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, the intensities of only two types of spin preserv ing transitions are considerable if both the BIA and IH are disregarded. Then the spin flip transitions are for bidden for k || along some high symmetry direction such as [10], [11]. If k || is along a low symmetry direction, for example, [12], then the intensity of the warping induced spin flip processes is negligibly small.…”

Section: Introductionmentioning

confidence: 99%

“…These symmetry breaking mechanisms also result in consid erable anisotropy of dispersion curves for different directions of the quasiparticle in plane wave vector. They change the selection rules for optical transitions for the transitions caused by light linearly polarized along the high symmetry directions such as the [001] growth direction, [10] and [01] directions in the plane of the quantum well if the initial state in plane wave vector is also aligned with the high symmetry direc tions ( [10] or [01]) [12,13]. As a result, the optical matrix elements are nonzero for all the four possible transitions between two spin split subbands 1hh and 2e (or 1e and 2e).…”

Section: Introductionmentioning

confidence: 99%

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Optical anisotropy of InAs/GaSb broken-gap quantum wells

Zakharova

Semenikhin

Chao

2012

J. Exp. Theor. Phys.

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General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal Take down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ISSN 1063 7761, Journal of Experimental and Theoretical Physics, 2012, Vol. 114, No. 5, pp. 731-737. © Pleiades Publishing, Inc., 2012 731 1 INTRODUCTIONThe knowledge on optical properties of broken gap heterostructures with InAs/GaSb or similar quantum wells is of great importance because of intensive exper imental investigations on the application of these structures for infrared laser generation. Cascade lasers with multiple quantum wells have been proposed [1] and realized experimentally [2][3][4]. The active region of these devices can contain more than ten stages con sisting of InAs, GaSb, AlSb or other (for example, GaInSb or AlInSb) thin layers. The narrow gap InAs and GaSb layers have two dimensional electron and hole levels between which the optical transitions occur. The wide gap AlSb (AlGaSb, AlInSb) tunnel ing barriers supply the transfer of the carriers through the structure to achieve the population inversion between the electronlike and hole like levels and the laser generation. It was shown that such a laser can operate at temperatures up to 100 K [4].In cascade lasers, the first electron like level in the InAs layer 1e is higher than the first heavy hole like level 1hh in the GaSb layer [5,6]. The separation between them corresponds to the mid infrared energy range for the emitted photons. However, the situation can be different for quantum wells with thicker InAs and GaSb layers. Because of an overlap of the InAs conduction band and the GaSb valence band, the 1e 1 The article is published in the original. level can then be located below the 1hh level at the zone center (with the carrier in plane wave vector k || = 0) [5]. The 1e and 1hh levels anticross and hybridize for k || ≠ 0, which has been observed experimentally [7,8] and studied theoretically [5,[9][10][11]. Laser genera tion in such thicker structures with hybridized elec tron hole states has been also proposed [8]. In this case, the optical transitions exist between the states of the second electron like subband 2e in the InAs layer and the lower hybridized states. These hybridizations can occur between two states (one electron state and one heavy hole state or one electron state and one light hole state). Also, three states (an electron state, a heavy h...

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On the Farsightedness (hyperopia) of the Standard k � p Model

Zunger

2002

phys. stat. sol. (a)

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The use of a small number of bands in conventional k Á p treatment of nanostructures leads to "farsightedness" (hyperopia), whereby the correct, detailed atomistic symmetry is not seen by the model, but only the global landscape symmetry is noted. Consequently, the real symmetry is confused with a higher symmetry. As a result, a number of important symmetry-mandated physical couplings are unwittingly set to zero in the k Á p approach. These are often introduced, after-thefact, "by hand", via an ansatz. Sometimes physical effects (e.g., piezoelectricity) are invoked to fix the otherwise incorrect symmetry. Thus, whereas in atomistic theories of nanostructures (tightbinding, pseudopotentials) the physically correct symmetry is naturally forced upon us by the structure itself, in the standard k Á p model it is accommodated ex post facto once it is known from sources outside the model itself.

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Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices

Cited by 40 publications

References 31 publications

Spin states in InAs/AlSb/GaSb semiconductor quantum wells

Spin states in InAs/AlSb/GaSb semiconductor quantum wells

Optical anisotropy of InAs/GaSb broken-gap quantum wells

On the Farsightedness (hyperopia) of the Standard k � p Model

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