Anti-Stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process

Chine, Z.; Piriou, B.; Oueslati, M.; Boufaden, T.; Jani, B. El

doi:10.1016/s0022-2313(99)00014-9

Cited by 10 publications

(10 citation statements)

References 11 publications

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“…76,[98][99][100]152 To determine whether the PLE spectrum is related to one defect or due to a superposition of emissions from defects with different vibrational properties, one should compare the PL spectra at different excitation energies. In some investigations, 98,99,191 the same shape and position of the YL band were observed at different excitation energies. The zero-phonon energy, below which the excitation of the YL band is impossible, has been estimated as 2.64± 0.05 eV.…”

Section: Resonant Excitationmentioning

confidence: 76%

“…It also helps in delineating the PL bands which are overlapped in the SSPL spectrum. Transient PL for the YL band in GaN has been investigated by several authors, 76,87,110,142,143,152,161,166,[188][189][190][191][192] and the results have often been controversial. For example, the reported PL lifetime for the YL ranges from 20 ps ͑Ref.…”

Section: Time-resolved Plmentioning

confidence: 99%

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Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,804

119

1,666

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Gallium nitride ͑GaN͒ and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet ͑UV͒ emitters and detectors ͑in photon ranges inaccessible by other semiconductors͒ and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects ͑vacancies, interstitial, and antisites͒, intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

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Section: Resonant Excitationmentioning

confidence: 76%

Section: Time-resolved Plmentioning

confidence: 99%

Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,804

119

1,666

View full text Add to dashboard Cite

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“…Luminescence up-conversion (LUC) has recently been observed in semiconductor heterojunctions and quantum wells [268][269][270][271][272][273][274][275][276][277][278][279][280][281][282][283][284] and has been explained based on either Auger recombination [272,277,285] or two-photon absorption [278]. Long-lived intermediate states have been suggested as essential for LUC in some heterostructures such as GaAs/Al x Ga 1−x As [277].…”

Section: Luminescence Up-conversionmentioning

confidence: 99%

Optical Properties of Semiconductor Nanomaterials

Zhang¹

2009

Optical Properties and Spectroscopy of Nanomaterials

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“…For bulk semiconductors, the energy up-conversion is usually achieved by (i) an Auger recombination process, (ii) anti-Stokes Raman scattering mediated by thermally populated phonons, or (iii) two-photon absorption [126,127]. Luminescence up-conversion has been observed in semiconductor heterojunctions and quantum wells [127][128][129][130][131][132][133][134][135][136][137][138][139][140][141][142][143] and has been explained based on either Auger recombination [131,136,144] or twophoton absorption [137]. Long-lived intermediate states have been suggested to be essential for luminescence up-conversion in some heterostructures such as GaAs/Al x Ga 1-x As [136].…”

Section: Non-linear Optical Absorption and Emissionmentioning

confidence: 99%

Optical and Dynamic Properties of Undoped and Doped Semiconductor Nanostructures

Grant¹,

Zhang²

2008

Annual Review of Nano Research

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This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials.Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties.Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.2

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Anti-Stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process

Cited by 10 publications

References 11 publications

Luminescence properties of defects in GaN

Luminescence properties of defects in GaN

Optical Properties of Semiconductor Nanomaterials

Optical and Dynamic Properties of Undoped and Doped Semiconductor Nanostructures

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