Anti-Reflectance Optimization of Secondary Nanostructured Black Silicon Grown on Micro-Structured Arrays

Tan, Xiao; Tao, Zhi; Yu, Meng; Wu, Hanxiao; Li, Haiwang

doi:10.3390/mi9080385

Cited by 9 publications

(4 citation statements)

References 72 publications

(68 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The most difficult process is to deeply etch the bulk silicon structure using inductively coupled plasma (ICP) to get a high aspect ratio. At present, high-precision deep etching methods have been applied, and high aspect ratio structures [26] and shaped three-dimensional structures [27,28] can be obtained by etching. The literature [26] completed the optimization of the parameters of the ICP etching process through a large number of contrasting experiments and formed the etching experience formula of single crystal silicon structures of different widths and depths.…”

Section: Methodsmentioning

confidence: 99%

Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure

Zhai

Tao

et al. 2019

Sensors

Self Cite

View full text Add to dashboard Cite

High-precision, low-temperature-sensitive microelectromechanical system (MEMS) capacitive accelerometers are widely used in aerospace, automotive, and navigation systems. An analytical study of the temperature drift of bias (TDB) and temperature drift of scale factor (TDSF) for an asymmetric comb capacitive accelerometer is presented in this paper. A five-layer model is established for the equivalent expansion ratio in the TDB and TDSF formulas, and the results calculated by the weighted average of thickness and elasticity modulus method are closest to the results of the numerical simulation. The analytical formulas of TDB and TDSF for an asymmetric structure are obtained. For an asymmetric structure, TDB is only related to thermal deformation and fabrication error. Additionally, half of the fixed electrode distance is not included in the expressions of Δ d and Δ D for asymmetric structures, thus resulting in the TDSF of the asymmetric structure being smaller compared to a symmetric structure with the same structural parameters. The TDSF of the symmetric structure is [−200.2 ppm/°C, −261.6 ppm/°C], while the results of the asymmetric structure are [−11.004 ppm/°C, −72.404 ppm/°C] under the same set of parameters. The parameters of the optimal asymmetric structure are obtained for fabrication guidance using numerical methods. In the experiment, the TDSF and TDB of the packaged structure and the non-packaged structure are compared, and a significant effect of the package on the signal output is found. The TDB is reduced from 3000 to 60 μg/°C, while the TDSF is reduced from 3000 to 140 ppm/°C.

show abstract

Section: Methodsmentioning

confidence: 99%

Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure

Zhai

Tao

et al. 2019

Sensors

Self Cite

View full text Add to dashboard Cite

show abstract

“…This material has high mechanical, chemical and thermal stability and can be used in a wide range of applications [ 1 ]. The most prominent of them is antireflective coatings [ 2 , 3 , 4 , 5 ]. The other applications use black silicon in structures requiring a developed surface—photovoltaics [ 6 , 7 ], photodetection [ 8 ], supercapacitors [ 9 , 10 ], catalysts [ 11 , 12 , 13 ], gas sensors [ 14 ], and THz-range radiation emitters [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF6/O2 Gas Mixture

Miakonkikh,

Kuzmenko

2024

Nanomaterials

View full text Add to dashboard Cite

This article discusses a method for forming black silicon using plasma etching at a sample temperature range from −20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride. The surface morphology of the resulting structures, the autocorrelation function of surface features, and reflectivity were studied depending on the process parameters—the composition of the plasma mixture, temperature and other discharge parameters (radical concentrations). The relationship between these parameters and the concentrations of oxygen and fluorine radicals in plasma is shown. A novel approach has been studied to reduce the reflectance using conformal bilayer dielectric coatings deposited by atomic layer deposition. The reflectivity of the resulting black silicon was studied in a wide spectral range from 400 to 900 nm. As a result of the research, technologies for creating black silicon on silicon wafers with a diameter of 200 mm have been proposed, and the structure formation process takes no more than 5 min. The resulting structures are an example of the self-formation of nanostructures due to anisotropic etching in a gas discharge plasma. This material has high mechanical, chemical and thermal stability and can be used as an antireflective coating, in structures requiring a developed surface—photovoltaics, supercapacitors, catalysts, and antibacterial surfaces.

show abstract

“…Recently, techniques based on reactive ion etching (RIE) and metal catalyzed chemical etching (MCCE) have been developed. Nevertheless, they also have some problems, such as costly facility, required operational conditions, and wasted liquid that may be harmful to the natural environment [ 37 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 ]. An appealing technique is that of directly ablating silicon surface to obtain “penguin-like” microstructures via femtosecond lasering in toxic gas atmospheres such as SF 6 , Cl 2 , and H 2 S [ 51 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 ].…”

Section: Introductionmentioning

confidence: 99%

Facile Fabrication of Self-Similar Hierarchical Micro-Nano Structures for Multifunctional Surfaces via Solvent-Assisted UV-Lasering

Zhang

Qin

et al. 2020

Micromachines

View full text Add to dashboard Cite

Cross-scale self-similar hierarchical micro–nano structures in living systems often provide unique features on surfaces and serve as inspiration sources for artificial materials or devices. For instance, a highly self-similar structure often has a higher fractal dimension and, consequently, a larger active surface area; hence, it would have a super surface performance compared to its peer. However, artificial self-similar surfaces with hierarchical micro–nano structures and their application development have not yet received enough attention. Here, by introducing solvent-assisted UV-lasering, we establish an elegant approach to fabricate self-similar hierarchical micro–nano structures on silicon. The self-similar structure exhibits a super hydrophilicity, a high light absorbance (>90%) in an ultra-broad spectrum (200–2500 nm), and an extraordinarily high efficiency in heat transfer. Through further combinations with other techniques, such surfaces can be used for capillary assembling soft electronics, surface self-cleaning, and so on. Furthermore, such an approach can be transferred to other materials with minor modifications. For instance, by doping carbon in polymer matrix, a silicone surface with hierarchical micro–nano structures can be obtained. By selectively patterning such hierarchical structures, we obtained an ultra-high sensitivity bending sensor. We believe that such a fabrication technique of self-similar hierarchical micro–nano structures may encourage researchers to deeply explore the unique features of functional surfaces with such structures and to further discover their potentials in various applications in diverse directions.

show abstract

Anti-Reflectance Optimization of Secondary Nanostructured Black Silicon Grown on Micro-Structured Arrays

Cited by 9 publications

References 72 publications

Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure

Thermal Drift Investigation of an SOI-Based MEMS Capacitive Sensor with an Asymmetric Structure

Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF6/O2 Gas Mixture

Facile Fabrication of Self-Similar Hierarchical Micro-Nano Structures for Multifunctional Surfaces via Solvent-Assisted UV-Lasering

Contact Info

Product

Resources

About