Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

Scanning force microscopy studies of GaAs films grown on offcut Ge substrates

“…7 The GaAs film thicknesses (d GaAs ) range from 1000Å, 1 µm, to 2.5 µm. The (001) Ge substrates are offcut 6° toward the [110] direction in order to minimize the presence of single steps on them.…”

“…It is found that the MEE layers minimize the diffusion of Ge atoms into the GaAs films. 7 The first 1000Å GaAs is grown at a rate of 0.1 ML/s at either 350 or 500°C. Then the samples are either in situ annealed at 600°C (for d GaAs = 1000Å samples) or are raised to 600°C for the rest growth (for d GaAs = 1 µm and d GaAs = 2.5 µm samples) by co-deposition.…”

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

“…To resolve this, a high offcut angle (usually 4°to 6°) is used to reduce the step spacing and possibly shrink the sizes of APDs. [16][17][18] Prior to the growth of III-V on Ge, a Ge layer with high quality needs to be grown on Si. Hartman et al grew a thick ($2.5 lm) Ge epilayer on both 0°and 6°o ffcut wafers and reported similar Ge qualities [in terms of surface roughness, threading dislocation density (TDD), and strain state].…”

Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup

“…The samples of this study were grown under a molecular beam epitaxy (MBE) system on (001)-oriented Si 6 -off substrates toward the [110] direction to favour the APD density limitation (Kroemer, 1987;Sieg et al, 1998;Volz et al, 2011). The substrates were prepared by an HF-last cleaning process consisting of a diluted HF dip followed by exposure under UV/O 3 environment and a last diluted HF dip (Quinci et al, 2013).…”