Antenna Aperture Tuning with High-Voltage Bulk-CMOS Switch-Based RF Capacitor

Solomko, Valentyn; Oezdamar, Oguzhan; Wang, Kun; Pfuhl, Nadine; Thomas, Anthony; Weigel, Robert; Hagelauer, Amelie

doi:10.1109/apmc46564.2019.9038800

Cited by 5 publications

(1 citation statement)

References 10 publications

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“…In one of the previous works the authors demonstrated a dual-band IFA tuned by an LC network based on a single RF capacitor [7]. The feed was matched at LB and MB.…”

Section: Introductionmentioning

confidence: 99%

Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors

Solomko

Oezdamar

Weigel

et al. 2021

IEEE Open J. Antennas Propag.

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A penta-band inverted-F antenna (IFA) tuned by two high-voltage aperture tuning networks is presented in the paper. The design is based on a singe, non-bended radiating arm IFA. Each of the two aperture tuners comprises a high-voltage switchable RF capacitor IC in parallel with an off-chip inductor. The antenna can be tuned to any of the 5 bands of sub-4 GHz cellular spectrum between 690 MHz and 3800 MHz with return loss exceeding 6 dB at the feed over more that 95 % of the total frequency range. A systematic design and analysis of the penta-band IFA based on transmission line model is provided, tuning approach for carrier aggregation enablement over two bands at a time is discussed. A nonlinear performance of the designed antenna with RF capacitors fabricated in bulk-CMOS RF-switch technology is demonstrated. INDEX TERMS antenna tuning, aperture tuning, C-tuner, carrier aggregation, cellular user equipment, harmonics, high-voltage RF switch, inverted-F antenna, mobile handset, RF switch, switchable capacitor, user terminal

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“…In one of the previous works the authors demonstrated a dual-band IFA tuned by an LC network based on a single RF capacitor [7]. The feed was matched at LB and MB.…”

Section: Introductionmentioning

confidence: 99%