Another route to fabricate single-phase chalcogenides by post-selenization of Cu–In–Ga precursors sputter deposited from a single ternary target

Chen, G.S.; Yang, Jung; Chan, Yu-Chen; Yang, LM; Huang, Welson

doi:10.1016/j.solmat.2009.02.014

Cited by 75 publications

(29 citation statements)

References 17 publications

(23 reference statements)

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“…The atomic ratio CGI = Cu/(Ga+In) of ca. 1.8 for the underlayer fits well to the copper-rich Cu 16 (In 1-y ,Ga y ) 9 phase. The top layer contains much more In than the underlayer and we hence expect In to be present as a mixed alloy along with the Cu-In-Ga phase(s).…”

Section: Precursor Characterizationsupporting

confidence: 53%

“…Indeed, our XRD measurements of a precursor indicate the existence of elemental indium as well as Cu 16 (In 1-y ,Ga y ) 9 and/or Cu 9 (In,Ga) 4 within the layer (see Fig. 2).…”

Section: Precursor Characterizationmentioning

confidence: 76%

“…Purwins et al 14 described the existence of a two-phase regime in the Cu-In-Ga phase diagram, consisting of elemental indium together with the copper-rich Cu 16 (In 1-y ,Ga y ) 9 and/or Cu 9 (In,Ga) 4 phases. Indeed, our XRD measurements of a precursor indicate the existence of elemental indium as well as Cu 16 (In 1-y ,Ga y ) 9 and/or Cu 9 (In,Ga) 4 within the layer (see Fig.…”

Section: Precursor Characterizationmentioning

confidence: 99%

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Cu(In,Ga)Se<sub>2</sub> thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step

et al. 2011

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Abstract. High-efficiency thin-film solar cells based on Cu(In,Ga)Se 2 are often formed by depositing precursor films and using a subsequent selenization step. We demonstrate a simple and cost-efficient approach simplifying both process steps by using a ternary Cu-In-Ga alloy target for sputter deposition of the precursor layer and by using a simple nonvacuum selenization reaction based on elemental selenium. In this contribution we examine in detail the characteristics of the precursor layers. The sputter growth is governed by a segregation of In-rich islands on top of a closed Cu-rich base. With optimized layers we could achieve conversion efficiencies well above 13% without the use of antireflective coating or metallic grids. The influence of the selenization duration on morphology and performance is discussed. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

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Section: Precursor Characterizationsupporting

confidence: 53%

“…Indeed, our XRD measurements of a precursor indicate the existence of elemental indium as well as Cu 16 (In 1-y ,Ga y ) 9 and/or Cu 9 (In,Ga) 4 within the layer (see Fig. 2).…”

Section: Precursor Characterizationmentioning

confidence: 76%

Section: Precursor Characterizationmentioning

confidence: 99%

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Cu(In,Ga)Se<sub>2</sub> thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step

et al. 2011

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“…Additionally, its high thermal stability makes the use of post-deposition heat treatment to improve its performanc [1][2][3] .…”

Section: Introductionmentioning

confidence: 99%

“…CIGS thin films have been prepared by a variety of deposition methods including co-evaporation, sputtering, chemical spray pyrolysis and electrodeposition [2][3][4][5][6] . Among these, CIGS thin films prepared by co-evaporation have yielded the highest efficiency;…”

Section: Introductionmentioning

confidence: 99%

Influence of Selenization Pressure on Properties of CIGS Absorber Layer Prepared by RF Sputtering

Jung¹,

Choi²,

Chung³

2016

Current Photovoltaic Research

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The effects of selenization pressure on the structural, optical and electrical properties of the CIGS thin films prepared by RF magnetron sputtering using a single quaternary target were investigated. At selenization pressures lower than atmospheric pressure, CIGS thin films formed non-stoichiometric compounds due to deficiencies of Se vapor. In contrast, when selenization process was conducted at above atmospheric pressure, the residence time of Se vapor inside the tube increased so that the Se element could be incorporated within vacant sites of the CIGS structure, resulting in the formation of stoichiometric CIGS thin films. High quality CIGS thin films could be obtained when the selenization process was performed at pressures greater than atmospheric and 550°C.

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Micro Photovoltaic Module Energy Harvesting

Wang²,

Wang³

et al. 2015

Micro Energy Harvesting

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Another route to fabricate single-phase chalcogenides by post-selenization of Cu–In–Ga precursors sputter deposited from a single ternary target

Cited by 75 publications

References 17 publications

Cu(In,Ga)Se<sub>2</sub> thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step

Cu(In,Ga)Se<sub>2</sub> thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step

Influence of Selenization Pressure on Properties of CIGS Absorber Layer Prepared by RF Sputtering

Micro Photovoltaic Module Energy Harvesting

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