Anomaly detection of non punch through insulated gate bipolar transistors (IGBT) by robust covariance estimation techniques

Patil, Nishad; Menon, Sandeep; Das, Diganta; Pecht, Michael

doi:10.1109/icresh.2010.5779635

Cited by 12 publications

(6 citation statements)

References 12 publications

(13 reference statements)

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“…The basic concern of IGBTs is the trade-off relationship between the on-state voltage, Von, and the turn-off loss, Eoff. To improve this trade-off, new device structures are constantly being proposed, from the punch-through (PT) IGBT [2] and the non-punch-through (NPT) IGBT [3] to the field-stop (FS) IGBT [4]. To further improve the relationship, the superjunction (SJ) FS IGBT was proposed [5].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT

Lin

Zeng

et al. 2022

IEEE J. Electron Devices Soc.

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This paper studies the short-circuit safe operating area (SCSOA) of the conventional field-stop (FS) IGBT and the superjunction (SJ) FS IGBT, based on 1200 V-rated samples, with the help of numerical electrothermal simulations. The results show that the peak electric field influences the distribution of the temperature inside devices and plays a crucial role in determining their SCSOAs. When the doping concentration of the collector, NC, is low, the peak electric field exits near the collector. Both types of IGBTs have a long short-circuit time, TSC, which can exceed 15 μs. TSC decreases with the increase of NC because the peak electric field transfers to near the channel. The introduction of the SJ structure weakens the peak electric field and increases TSC. The difference is at least 4 μs and up to 6.87 μs, when NC ranges from 2.0 × 10 17 cm -3 to 1.1 × 10 18 cm -3 . Besides, TSC of the SJ IGBT can be increased by using highly-doped pillars. Index Terms-Superjunction (SJ), Field-stop (FS), Short-circuit safe operating area (SCSOA), Insulated gate bipolar transistor (IGBT).

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Section: Introductionmentioning

confidence: 99%

Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT

Lin

Zeng

et al. 2022

IEEE J. Electron Devices Soc.

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“…In the published work, various methods have been proposed for anomaly detection, and these methods can be categorized into simulation-aided methods [3] [4], expert systems [5] [6] physics-of-failure models [7] [8], and datadriven models [9] [10]. The braking system is designed based on the fault-oriented safety principle, resulting in a complex structure [11].…”

Section: Introductionmentioning

confidence: 99%

An Efficient Anomaly Detection for High-Speed Train Braking System Using Broad Learning System

Wang

Liu

2021

IEEE Access

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For a high-speed train, the braking system plays an essential role in safe transportation. Efficient state monitoring and anomaly detection may provide useful information for real-time decisions. With large amount of monitoring data, data-driven methods, especially deep learning methods are widely adopted for anomaly detection in various industrial applications. Although deep learning methods have advantages in discovering non-linear relations among complex and high-dimensional data, the large amount of hyperparameters can be hardly well tuned with a high computational burden for onboard computers. Therefore, in this work an efficient online anomaly detection model based on Broad Learning System (BLS) is established for detecting anomalies in the braking system. Furthermore, considering the intrinsic imbalanced data size on anomaly and normal states, the cost-sensitive learning method is integrated in the BLS model, for the first time. The proposed model is evaluated on real data collected from a high-speed train operating for one year, with respect to two performance metrics, i.e. G-mean and F1-score. Comparisons with benchmark neural networks and the combinations of sampling methods and BLS are also considered in this work.

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“…failure of metal-oxide-semiconductor field-effect transistors (MOSFETs) and IGBTs and hypothesized that the failures are a combination of manufacturing defects and poor thermal management. Patil et al [4]- [6] tested the degradation performance of IGBT under different stress conditions like temperature. Ghimire et al [7], [8] studied online degradation diagnosis using a single parameter.…”

Section: Introductionmentioning

confidence: 99%

Online Degradation State Assessment Methodology for Multi-Mode Failures of Insulated Gate Bipolar Transistor

et al. 2020

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Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online assessment of the degradation state of IGBTs can prolong normal operation and enable proactive maintenance of the system. The research idea is to find a reliable and robust mechanism for IGBT degradation assessment. This paper developed a prediction interval-based degradation assessment methodology that accurately classifies different health states or degradation levels of IGBTs by adding prediction bounds and using them as a critical value for serious damage. It first computes the prediction interval and then uses the Mahalanobis distance to classify the state into degradation level 1 and degradation level 2, instead of just applying the base algorithm. The developed method outperforms distance-based classification schemes and self-organizing maps for online assessment of degradation levels. It only requires training of 1000 initial points which are assumed to be healthy. Furthermore, the generalizability of the method has been shown by validating the effectiveness of the proposed method on three other modules.

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Anomaly detection of non punch through insulated gate bipolar transistors (IGBT) by robust covariance estimation techniques

Cited by 12 publications

References 12 publications

Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT

Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT

An Efficient Anomaly Detection for High-Speed Train Braking System Using Broad Learning System

Online Degradation State Assessment Methodology for Multi-Mode Failures of Insulated Gate Bipolar Transistor

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