2018
DOI: 10.1088/1367-2630/aac595
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Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

Abstract: We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (∼500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T=7 K and perfect stability against quantizing magnetic fields. We discus… Show more

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Cited by 11 publications
(6 citation statements)
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“…Line profiles along dashed lines in (d) are shown in (e) and (f), which illustrate dI/dV versus temperature or magnetic field below or above the E C . Clearly, when at above E C , the BLG restores back to a semi-metallic state with conductance at the order of mS, and quantum oscillations are seen in neither the insulating nor the normal semi-metallic phases, in agreement with previously reported excitonic insulator [38]. Data obtained from different electrodes at different dopings show similar results, as shown in Extended Data Figure 7.…”
Section: Gate Tuned Semi-metal To Extremely-insulatingstate Transitio...supporting
confidence: 89%
“…Line profiles along dashed lines in (d) are shown in (e) and (f), which illustrate dI/dV versus temperature or magnetic field below or above the E C . Clearly, when at above E C , the BLG restores back to a semi-metallic state with conductance at the order of mS, and quantum oscillations are seen in neither the insulating nor the normal semi-metallic phases, in agreement with previously reported excitonic insulator [38]. Data obtained from different electrodes at different dopings show similar results, as shown in Extended Data Figure 7.…”
Section: Gate Tuned Semi-metal To Extremely-insulatingstate Transitio...supporting
confidence: 89%
“…Here, electrons are located in the InAs QW and holes are located in the GaSb QW. Recent theoretical calculations confirmed the experimental observation that the EI phase exists in this system . Interestingly, the bands overlap can be changed by changing the width of one of the QWs—this change corresponds to a modulation of scriptG in our model.…”
Section: Differential Conductance and Differential Resistancesupporting
confidence: 79%
“…Here, electrons are located in the InAs QW and holes are located in the GaSb QW. Recent theoretical calculations [58] confirmed the experimental observation that the EI phase exists in this system [59,60]. Interestingly, the bands overlap, can be…”
Section: J O L S M F E U = " > a A A C L N I C B Z D N S S N A F I U ...supporting
confidence: 58%