Anomalous thermal expansion of Sb<sub>2</sub>Te<sub>3</sub> topological insulator

Dutta, Paramita; Bhoi, Dilip; Midya, A.; Khan, N.; Mandal, Partha Sarathi; Samatham, S. Shanmukharao; Ganesan, V.

doi:10.1063/1.4730390

Cited by 40 publications

(30 citation statements)

References 14 publications

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“…Besides, QLs are bonded by van der Waals (vdW) forces, while the five atoms in each QL are held simultaneously by covalent bond. This result matches well with the previously reported literature [6,39,41].…”

Section: Resultssupporting

confidence: 94%

Crystal growth and characterization of bulk Sb₂Te₃ topological insulator

Sultana

Gurjar

Patnaik

et al. 2018

Mater. Res. Express

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The Sb 2 Te 3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850˚C), followed by slow cooling (2˚C/hour). As grown Sb 2 Te 3 crystals are analysed for various physical properties by X-ray diffraction (XRD), Raman Spectroscopy, Scanning Electron Microscopy (SEM) coupled with Energy Dispersive X-ray Spectroscopy (EDAX) and electrical measurements under magnetic field (6Tesla) down to low temperature (2.5K). The XRD pattern revealed the growth of synthesized Sb 2 Te 3 sample along (00l) plane, whereas the SEM along with EDAX measurements displayed the layered structure with near stoichiometric composition, without foreign contamination. The Raman scattering studies displayed known (A 1g 1 , E g 2 and A 1g 2 ) vibrational modes for the studied Sb 2 Te 3 . The temperature dependent electrical resistivity measurements illustrated the metallic nature of the as grown Sb 2 Te 3 single crystal. Further, the magnetotransport studies represented linear positive magneto-resistance (MR) reaching up to 80% at 2.5K under an applied field of 6Tesla.The weak anti localization (WAL) related low field (± 2Tesla) magneto-conductance at low temperatures (2.5K and 20K) has been analysed and discussed using the Hikami-Larkin -Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb 2 Te 3 topological insulator (TI) and its brief physical property characterization.

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Section: Resultssupporting

confidence: 94%

Crystal growth and characterization of bulk Sb₂Te₃ topological insulator

Sultana

Gurjar

Patnaik

et al. 2018

Mater. Res. Express

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“…The reason may be that we measured C P down to 5K only, which had been measured and fitted down to 2K in ref. 27. None the less the shape of C p plot is identical to that as reported in ref.…”

Section: Resultssupporting

confidence: 83%

“…None the less the shape of C p plot is identical to that as reported in ref. 27 and the values thus obtained are comparable. To observe the vibrational modes of the studied Bi 2 Se 3 , Raman Spectroscopy of the synthesized crystal was recorded using the Renishaw Raman Spectrometer.…”

Section: Resultssupporting

confidence: 74%

Electrical, Thermal and Spectroscopic Characterization of Bulk Bi2Se3 Topological Insulator

Sultana

Awana

Pal

et al. 2017

J Supercond Nov Magn

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We report electrical (angular magneto-resistance, and Hall), thermal (heat capacity) and spectroscopic (Raman, x-ray photo electron, angle resolved photo electron) characterization of bulk Bi 2 Se 3 topological insulator, which is being is grown by self flux method through solid state reaction from high temperature (950˚C) melt and slow cooling (2˚C/hour) of constituent elements. Bi 2 Se 3 exhibited metallic behaviour down to 5K. Magneto transport measurements revealed linear up to 400% and 30% MR at 5K under 14 Tesla field in perpendicular and parallel field direction respectively. We noticed that the magneto-resistance (MR) of Bi 2 Se 3 is very sensitive to the angle of applied field. MR is maximum when the field is normal to the sample surface, while it is minimum when the field is parallel. Hall coefficient (R H ) is seen nearly invariant with negative carrier sign down to 5K albeit having near periodic oscillations above 100K. Heat capacity (C p ) versus temperature plot is seen without any phase transitions down to 5K and is well fitted (Cp = γT + βT 3 ) at low temperature with calculated Debye temperature (Ѳ D ) value of 105.5K. Clear Raman peaks are seen at 72, 131 and 177 cm -1 corresponding to A 1g 1 , E g 2 and A 1g 2 respectively. Though, two distinct asymmetric characteristic peak shapes are seen for Bi 4f 7/2 and Bi 4f 5/2 , the Se 3d region is found to be broad displaying the overlapping of spin -orbit components of the same. Angle-resolved photoemission spectroscopy (ARPES) data of Bi 2 Se 3 revealed distinctly the bulk conduction bands (BCB), surface state (SS), Dirac point (DP) and bulk valence bands (BVB) and 3D bulk conduction signatures are clearly seen. Summarily, host of physical properties for as grown Bi 2 Se 3 crystal are reported here.

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“…The Debye temperature (Ѳ D ) calculated using the formula Ѳ D = [234zR/ β] 1/3turns out to be 135 K, where z is the number of atoms per formula unit and R is the gas constant. The Cp plot as well as the Ѳ D value are in agreement to the earlier reported literature of TI[11,[25][26].…”

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confidence: 91%

High field (up to 140 kOe) angle dependent magneto transport of Bi₂Te₃ single crystals

Sultana¹,

Maheshwari²,

Tiwari³

et al. 2018

Mater. Res. Express

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We report the angle dependent high field (up to 140 kOe) magneto transport of Bi 2 Te 3 single crystals, a well-known topological insulator. The crystals were grown from melt of constituent elements via solid state reaction route by self-flux method. Details of crystal growth along with their brief characterization up to 5 Tesla applied field was reported by some of us recently [J. Magn. Mag. Mater. 428, 213 (2017)]. The angle dependence of the magneto-resistance (MR) of Bi 2 Te 3 follows the cos () function i.e., MR is responsive, when the applied field is perpendicular (tilt angle  = 0 o and/or 180 o ) to the transport current. The low field (±10 kOe) MR showed the signatures of weak anti localization (WAL) character with typical ν-type cusp near origin at 5 K. Further, the MR is linear right up to highest applied field of 140 kOe. The large positive MR are observed up to high temperatures and are above 250% and 150% at 140 kOe in perpendicular fields at 50 K and 100 K respectively. Heat capacity C P (T) measurements revealed the value of Debye temperature (Ѳ D ) to be 135 K. ARPES (angle resolved photoemission spectroscopy) data clearly showed that the bulk Bi 2 Te 3 single crystal consists of a single Dirac cone.

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Anomalous thermal expansion of Sb₂Te₃ topological insulator

Cited by 40 publications

References 14 publications

Crystal growth and characterization of bulk Sb₂Te₃ topological insulator

Crystal growth and characterization of bulk Sb₂Te₃ topological insulator

Electrical, Thermal and Spectroscopic Characterization of Bulk Bi2Se3 Topological Insulator

High field (up to 140 kOe) angle dependent magneto transport of Bi₂Te₃ single crystals

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Anomalous thermal expansion of Sb2Te3 topological insulator

Cited by 40 publications

References 14 publications

Crystal growth and characterization of bulk Sb2Te3 topological insulator

Crystal growth and characterization of bulk Sb2Te3 topological insulator

Electrical, Thermal and Spectroscopic Characterization of Bulk Bi2Se3 Topological Insulator

High field (up to 140 kOe) angle dependent magneto transport of Bi2Te3 single crystals

Contact Info

Product

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Anomalous thermal expansion of Sb₂Te₃ topological insulator

Crystal growth and characterization of bulk Sb₂Te₃ topological insulator

Crystal growth and characterization of bulk Sb₂Te₃ topological insulator

High field (up to 140 kOe) angle dependent magneto transport of Bi₂Te₃ single crystals